公开(公告)号：US07906443B2

公开(公告)日：2011-03-15

申请号：US11441065

申请日：2006-05-26

申请人： Katsuto Tanahashi ,  Hiroshi Kaneta

发明人： Katsuto Tanahashi ,  Hiroshi Kaneta

IPC分类号： H01L21/00 ,  C30B15/00 ,  C30B21/06 ,  C30B27/02 ,  C30B28/10 ,  C30B30/04 ,  B23K26/00

CPC分类号： H01L21/3225 ,  C30B29/06 ,  C30B33/02 ,  C30B33/04 ,  H01L21/268 ,  H01L29/7833

摘要： A wafer processing method is provided that includes the steps of heating a silicon wafer containing oxygen and irradiating an infrared ray having a wavelength within a range of 7-25 μm on the silicon wafer, and controlling formation of oxygen precipitates within the silicon wafer by selectively setting a heating temperature for heating the silicon wafer and an irradiation intensity of the infrared ray.

摘要翻译： 提供一种晶片处理方法，其包括以下步骤：加热含有氧的硅晶片并在硅晶片上照射波长在7-25μm范围内的红外线，并且通过选择性地控制硅晶片内的氧沉淀物的形成 设定加热硅晶片的加热温度和红外线的照射强度。

公开(公告)号：US20070190809A1

公开(公告)日：2007-08-16

申请号：US11441065

申请日：2006-05-26

申请人： Katsuto Tanahashi ,  Hiroshi Kaneta

发明人： Katsuto Tanahashi ,  Hiroshi Kaneta

IPC分类号： H01L21/00

CPC分类号： H01L21/3225 ,  C30B29/06 ,  C30B33/02 ,  C30B33/04 ,  H01L21/268 ,  H01L29/7833

摘要： A wafer processing method is provided that includes the steps of heating a silicon wafer containing oxygen and irradiating an infrared ray having a wavelength within a range of 7-25 μm on the silicon wafer, and controlling formation of oxygen precipitates within the silicon wafer by selectively setting a heating temperature for heating the silicon wafer and an irradiation intensity of the infrared ray.

摘要翻译： 提供了一种晶片处理方法，其包括以下步骤：加热含氧的硅晶片，并在硅晶片上照射波长在7-25μm范围内的红外线，并且通过选择性地控制硅晶片内的氧沉淀物的形成 设定加热硅晶片的加热温度和红外线的照射强度。

公开(公告)号：US08578777B2

公开(公告)日：2013-11-12

申请号：US13394705

申请日：2010-08-19

申请人： Terutaka Goto ,  Hiroshi Kaneta ,  Yuichi Nemoto ,  Mitsuhiro Akatsu

发明人： Terutaka Goto ,  Hiroshi Kaneta ,  Yuichi Nemoto ,  Mitsuhiro Akatsu

IPC分类号： G01N29/07

CPC分类号： H01L22/12

摘要： A quantitative evaluation method, a method for manufacturing a silicon wafer, and a silicon wafer manufactured by the method, enabling more efficient evaluation of the concentration of atomic vacancies existing in a silicon wafer. The quantitative evaluation method includes steps of: oscillating, in a state in which an external magnetic field is applied to a silicon wafer (26) while keeping the silicon wafer (26) at a constant temperature, an ultrasonic wave pulse and receiving a measurement wave pulse obtained after the ultrasonic wave pulse is propagated through the silicon wafer (26) for detecting a phase difference between the ultrasonic wave pulse and the measurement wave pulse; and calculating an elastic constant from the phase difference. The external magnetic field is changed to calculate the elastic constant corresponding to a change in the external magnetic field for evaluating a concentration of atomic vacancies in the silicon wafer (26).

摘要翻译： 通过该方法制造的定量评价方法，硅晶片的制造方法和硅晶片，能够更有效地评价硅晶片中存在的原子空位的浓度。 定量评价方法包括以下步骤：在将硅晶片（26）保持在恒定温度的同时将外部磁场施加到硅晶片（26）的状态下振荡，超声波脉冲并接收测量波 超声波脉冲后通过用于检测超声波脉冲和测量波脉冲之间的相位差的硅晶片（26）传播得到的脉冲; 并从相位差计算弹性常数。 改变外部磁场以计算对应于用于评估硅晶片（26）中的原子空位浓度的外部磁场变化的弹性常数。

公开(公告)号：US20120168912A1

公开(公告)日：2012-07-05

申请号：US13394705

申请日：2010-08-19

申请人： Terutaka Goto ,  Hiroshi Kaneta ,  Yuichi Nemoto ,  Mitsuhiro Akatsu

发明人： Terutaka Goto ,  Hiroshi Kaneta ,  Yuichi Nemoto ,  Mitsuhiro Akatsu

IPC分类号： H01L29/36 ,  G01N27/72

CPC分类号： H01L22/12

摘要： A quantitative evaluation method, a method for manufacturing a silicon wafer, and a silicon wafer manufactured by the method, enabling more efficient evaluation of the concentration of atomic vacancies existing in a silicon wafer. The quantitative evaluation method includes steps of: oscillating, in a state in which an external magnetic field is applied to a silicon wafer (26) while keeping the silicon wafer (26) at a constant temperature, an ultrasonic wave pulse and receiving a measurement wave pulse obtained after the ultrasonic wave pulse is propagated through the silicon wafer (26) for detecting a phase difference between the ultrasonic wave pulse and the measurement wave pulse; and calculating an elastic constant from the phase difference. The external magnetic field is changed to calculate the elastic constant corresponding to a change in the external magnetic field for evaluating a concentration of atomic vacancies in the silicon wafer (26).

摘要翻译： 通过该方法制造的定量评价方法，硅晶片的制造方法和硅晶片，能够更有效地评价硅晶片中存在的原子空位的浓度。 定量评价方法包括以下步骤：在将硅晶片（26）保持在恒定温度的同时将外部磁场施加到硅晶片（26）的状态下振荡，超声波脉冲并接收测量波 超声波脉冲后通过用于检测超声波脉冲和测量波脉冲之间的相位差的硅晶片（26）传播得到的脉冲; 并从相位差计算弹性常数。 改变外部磁场以计算对应于用于评估硅晶片（26）中的原子空位浓度的外部磁场变化的弹性常数。

公开(公告)号：US07029789B2

公开(公告)日：2006-04-18

申请号：US10352134

申请日：2003-01-28

申请人： Hiroshi Kaneta

发明人： Hiroshi Kaneta

IPC分类号： H01M2/26 ,  H01M2/02 ,  H01M2/08

CPC分类号： H01M2/0285 ,  H01M2/0275 ,  H01M2/20 ,  H01M2/266 ,  H01M2/30 ,  H01M6/42 ,  H01M10/0436 ,  H01M10/052

摘要： The battery is constituted to satisfy B/A≧0.57, wherein “A” represents a width of an active material region and “B” represents a width of each electrode terminal.

公开(公告)号：US08017260B2

公开(公告)日：2011-09-13

申请号：US10505417

申请日：2003-04-23

申请人： Hiroshi Kaneta ,  Chika Kanbe

发明人： Hiroshi Kaneta ,  Chika Kanbe

IPC分类号： H01M10/50

CPC分类号： H01M2/0212 ,  H01M2/0207 ,  H01M2/0217 ,  H01M10/0436

摘要： A secondary battery in which temperature rise (heat generation) can be measured accurately at the time of quick charge/discharge, and a battery which can be configured readily using the secondary batteries while realizing low resistance. Separately from the positive and negative electrode terminals of a flat laminate film secondary battery, a third terminal is fixed perpendicularly thereto. The third terminal is connected with the electrode current collecting parts of a power generating element body constituting the secondary battery (1) and imparted with a potential equal to that of any one of the positive and negative electrode terminals. Inner temperature of the secondary battery is determined by measuring the temperature of the third terminal and a cell balancer circuit, or the like, is connected with the third terminal. The battery is configured by connecting the positive and negative electrode terminals directly in series.

摘要翻译： 可以在快速充放电时可以精确地测量温升（发热）的二次电池，以及能够在实现低电阻的同时容易地使用二次电池的电池。 与平面层叠薄膜二次电池的正极和负极端子分开，第三端子垂直固定。 第三端子与构成二次电池（1）的发电元件主体的电极集电部连接，并赋予与正极端子和负极端子中的任一个相同的电位。 通过测量第三端子和电池平衡器电路等的温度与第三端子连接来确定二次电池的内部温度。 电池通过串联连接正极和负极端子来进行配置。

公开(公告)号：US20050042511A1

公开(公告)日：2005-02-24

申请号：US10956514

申请日：2004-09-30

申请人： Hiroshi Kaneta

发明人： Hiroshi Kaneta

IPC分类号： H01M2/02 ,  H01M2/08 ,  H01M2/10 ,  H01M6/42 ,  H01M10/04

CPC分类号： H01M2/0275 ,  H01M2/08 ,  H01M6/42 ,  H01M10/0431

摘要： A flat secondary battery having a fusion-bonded sealing type laminate film as an armored body tends to be inferior in sealing reliability to a flat secondary battery having a welded sealing type can as an armored body, due to a difference in sealing method between the two batteries. Therefore, there has been a large challenge of finding the way to make the sealing reliability of the laminate film secondary battery closer to that of the can type secondary battery. The sealing reliability is improved by further increasing a sealing force without taking any measure to the existing laminate film secondary battery, in such a manner that the fusion bonding area of the existing laminate film secondary battery is sandwiched from upside and downside to be cramped from outside so as to mechanically add a sealing force from outside to the sealing force of the laminate film itself.

摘要翻译： 具有作为铠装体的熔接密封型层叠膜的扁平二次电池与具有作为铠装体的焊接密封型罐的扁平二次电池的密封可靠性趋于劣化，这是因为两者之间的密封方法不同 电池 因此，寻求使层压膜二次电池的密封可靠性更接近于罐式二次电池的方法存在很大的挑战。 通过进一步增加密封力而不对现有的层压膜二次电池进行任何措施来提高密封可靠性，使得现有的层压膜二次电池的熔接面积被夹在上下不能从外部夹紧 以便从外部机械地增加密封力到层压膜本身的密封力。

公开(公告)号：US5286658A

公开(公告)日：1994-02-15

申请号：US846061

申请日：1992-03-05

申请人： Yoshimi Shirakawa ,  Hiroshi Kaneta

发明人： Yoshimi Shirakawa ,  Hiroshi Kaneta

IPC分类号： H01L21/322 ,  H01L21/324

CPC分类号： H01L21/3225 ,  Y10S148/06

摘要： A semiconductor device is produced by a process for intrinsic gettering heat treatment of a silicon crystal in which the concentration of C--O complex defects destined to form seeds for oxygen precipitation in the silicon crystal is increased or an amount of oxygen precipitate in the silicon crystal is controlled, to thereby eliminate the dispersion of the amount from one crystal to another. In the heat treatment of the silicon crystal, the amount of oxygen precipitation can be controlled with a high accuracy.

摘要翻译： 半导体器件通过用于硅晶体的固有吸杂热处理的方法制造，其中指定用于形成硅晶体中的氧沉淀的种子的CO复合物缺陷的浓度增加或者硅晶体中的氧沉淀量被控制 ，从而消除了从一种晶体到另一种晶体的量的分散。 在硅晶体的热处理中，可以高精度地控制氧析出量。

公开(公告)号：US20100186512A1

公开(公告)日：2010-07-29

申请号：US12666869

申请日：2008-07-02

申请人： Terutaka Goto ,  Hiroshi Kaneta ,  Yuichi Nemoto

发明人： Terutaka Goto ,  Hiroshi Kaneta ,  Yuichi Nemoto

IPC分类号： G01N29/00 ,  H01L21/66

CPC分类号： H01L22/12 ,  G01N29/075 ,  G01N2291/02827 ,  G01N2291/0289

摘要： A quantitative evaluation device and method of an atomic vacancy, which are capable of efficiently and quantitatively evaluating an atomic vacancy existing in a silicon wafer. A quantitative evaluation device 1 is equipped with a detector 5 including an ultrasonic generator 27 and an ultrasonic receiver 28, a silicon sample 6 formed with the ultrasonic generator 27 and the ultrasonic receiver 28 on a silicon wafer 26 comprising perfect crystal silicon, a magnetic force generator 4 for applying an external magnetic field to the silicon sample 6, and a cooler 3 capable of cooling and controlling the silicon sample 6 to a range of temperatures lower than or equal to 50K. The ultrasonic generator 27 and the ultrasonic receiver 28 are each equipped with a transducer 30 including a thin film oscillator 31 formed from a high-polymer material with a physical property capable of following an expanding action of a silicon wafer 26 in association with a temperature drop in the above range of the temperatures and whose molecular axes are oriented in the direction of an electric field when decreasing temperature with the electric field applied thereto and further, including electrodes 32, 33 for applying an electric field to the thin film oscillator 31.

摘要翻译： 一种能够有效和定量地评估硅晶片中存在的原子空位的原子空位的定量评估装置和方法。 定量评价装置1配备有包括超声波发生器27和超声波接收器28的检测器5，在超声波发生器27和超声波接收器28上形成的硅样品6，该硅晶片26包括完美的晶体硅，磁力 用于向硅样品6施加外部磁场的发生器4，以及能够将硅样品6冷却并控制在低于或等于50K的温度范围内的冷却器3。 超声波发生器27和超声波接收器28均配备有换能器30，该换能器30包括由高分子材料形成的薄膜振荡器31，该高分子材料具有能够跟随硅晶片26的膨胀作用的物理特性， 在上述温度范围内，并且当施加电场而降低温度时，其分子轴在电场方向上取向，并且还包括用于向薄膜振荡器31施加电场的电极32,33。

公开(公告)号：US20090217866A1

公开(公告)日：2009-09-03

申请号：US12281624

申请日：2007-03-02

申请人： Terutaka Goto ,  Yuichi Nemoto ,  Hiroshi Kaneta ,  Masataka Hourai

发明人： Terutaka Goto ,  Yuichi Nemoto ,  Hiroshi Kaneta ,  Masataka Hourai

IPC分类号： C30B15/20

CPC分类号： C30B15/203 ,  C30B29/06

摘要： A Si single crystal having no defect region is stably grown by clearly detecting a type of a defect region or a defect free region of Si single crystal grown at a certain pulling rate profile and feeding back the data to the subsequent pulling. In the production of Si single crystal ingot by a CZ method, a concentration distribution of atomic vacancy in a cross-section of a precedent grown Si single crystal is detected by the direct observation method of atomic vacancy and then fed back to the subsequent pulling treatment to adjust a pulling rate profile of the subsequent pulling.

摘要翻译： 通过清楚地检测出以特定的拉伸速率曲线生长的Si单晶的缺陷区域或无缺陷区域的类型，并将数据反馈到随后的拉伸，稳定地生长没有缺陷区域的Si单晶。 在通过CZ法制造Si单晶锭时，通过原子空位的直接观察法检测先前生长的Si单晶的横截面中原子空位的浓度分布，然后反馈到随后的拉拔处理 以调整随后拉动的拉力曲线。