A method for manufacturing a semiconductor device using an immersion lithography process is disclosed. The immersion lithography process includes forming a photoresist film over an underlying layer of a semiconductor substrate; exposing the photoresist film to light without using an exposure mask; and performing an exposure process using an exposure mask. After exposure using the immersion lithography, a water mark generated from the exposure layer consumes a part of the acid of the exposure layer but the residual acid remains in the exposure layer to prevent generation of pattern defects such as T-top or pattern bridges.