发明授权
- 专利标题： Complementary metal gate dense interconnect and method of manufacturing
- 专利标题（中）： 互补金属栅极密集互连及其制造方法
-
申请号： US12022292申请日： 2008-01-30
-
公开(公告)号： US07910418B2公开(公告)日： 2011-03-22
- 发明人: Brent A. Anderson , Andres Bryant , William F. Clark, Jr. , Edward J. Nowak
- 申请人： Brent A. Anderson , Andres Bryant , William F. Clark, Jr. , Edward J. Nowak
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Roberts Mlotkowski Safran & Cole, P.C.
- 代理商 Richard Kotulak
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/8234
摘要：
Complementary metal gate dense interconnects and methods of manufacturing the interconnects is provided. The method comprises forming a first metal gate on a wafer and second metal gate on the wafer. A conductive interconnect material is deposited in a space formed between the first metal gate and the second metal gate to provide an electrical connection between the first metal gate and the second metal gate.
公开/授权文献
信息查询
IPC分类:
