发明授权
- 专利标题： Technique for forming an interlayer dielectric material of increased reliability above a structure including closely spaced lines
- 专利标题（中）： 在包括紧密间隔的线的结构之上形成可靠性高的层间电介质材料的技术
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申请号： US12020234申请日： 2008-01-25
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公开(公告)号： US07910496B2公开(公告)日： 2011-03-22
- 发明人: Frank Feustel , Kai Frohberg , Carsten Peters
- 申请人： Frank Feustel , Kai Frohberg , Carsten Peters
- 申请人地址： US TX Austin
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： US TX Austin
- 代理机构： Williams, Morgan & Amerson, P.C.
- 优先权： DE102007030058 20070629
- 主分类号： H01L21/76
- IPC分类号： H01L21/76
摘要：
By removing excess material of an interlayer dielectric material deposited by SACVD, the gap filling capabilities of this deposition technique may be exploited, while, on the other hand, negative effects of this material may be reduced. In other aspects, a buffer material, such as silicon dioxide, may be formed prior to depositing the interlayer dielectric material on the basis of SACVD, thereby creating enhanced uniformity during the deposition process when depositing the interlayer dielectric material on dielectric layers having different high intrinsic stress levels. Consequently, the reliability of the interlayer dielectric material may be enhanced while nevertheless maintaining the advantages provided by an SACVD deposition.
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