发明授权
- 专利标题： Multi-port memory based on DRAM core
- 专利标题（中）： 基于DRAM内核的多端口存储器
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申请号： US11512319申请日： 2006-08-30
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公开(公告)号： US07911825B2公开(公告)日： 2011-03-22
- 发明人: Yasurou Matsuzaki , Takaaki Suzuki , Masafumi Yamazaki , Kenichi Kawasaki , Shinnosuke Kamata , Ayako Sato , Masato Matsumiya
- 申请人： Yasurou Matsuzaki , Takaaki Suzuki , Masafumi Yamazaki , Kenichi Kawasaki , Shinnosuke Kamata , Ayako Sato , Masato Matsumiya
- 申请人地址： JP Yokohama
- 专利权人： Fujitsu Semiconductor Ltd.
- 当前专利权人： Fujitsu Semiconductor Ltd.
- 当前专利权人地址： JP Yokohama
- 代理机构： Arent Fox LLP
- 优先权： JP2000-387891 20001220; JP2000-398893 20001227; JP2000-399052 20001227; JP2001-034361 20010209; JP2001-037547 20010214; JP2002-070514 20020314
- 主分类号： G11C11/24
- IPC分类号： G11C11/24
摘要：
A semiconductor memory device includes a plurality of N external ports, each of which receives commands, and an internal circuit which performs at least N access operations during a minimum interval of the commands that are input into one of the external ports.
公开/授权文献
- US20060294322A1 Multi-port memory based on DRAM core 公开/授权日：2006-12-28