发明授权
- 专利标题： Light emitting semiconductor device having an electrical confinement barrier near the active region
- 专利标题（中）： 在有源区附近具有电限制屏障的发光半导体器件
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申请号： US11461353申请日： 2006-07-31
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公开(公告)号： US07920612B2公开(公告)日： 2011-04-05
- 发明人: Ralph H. Johnson , James R. Biard , James K. Guenter
- 申请人： Ralph H. Johnson , James R. Biard , James K. Guenter
- 申请人地址： US CA Sunnyvale
- 专利权人： Finisar Corporation
- 当前专利权人： Finisar Corporation
- 当前专利权人地址： US CA Sunnyvale
- 代理机构： Maschoff Gilmore & Israelsen
- 主分类号： H01S5/00
- IPC分类号： H01S5/00 ; H01S5/183 ; H01S5/323
摘要：
Light emitting semiconductor devices such as VCSELs, SELs, and LEDs are manufactured to have a thin electrical confinement barrier in a confining layer near the active region of the device. The thin confinement barrier comprises a III-V semiconductor material having a high aluminum content (e.g. 80%-100% of the type III material). The aluminum content of the adjacent spacer layer is lower than that of the confinement barrier. In one embodiment the spacer layer has an aluminum content of less than 40% and a direct bandgap. The aluminum profile reduces series resistance and improves the efficiency of the semiconductor device.