发明授权
- 专利标题: Organic thin film transistor with dual layer electrodes
- 专利标题(中): 具有双层电极的有机薄膜晶体管
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申请号: US11564438申请日: 2006-11-29
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公开(公告)号: US07923718B2公开(公告)日: 2011-04-12
- 发明人: Yiliang Wu , Beng S. Ong
- 申请人: Yiliang Wu , Beng S. Ong
- 申请人地址: US CT Norwalk
- 专利权人: Xerox Corporation
- 当前专利权人: Xerox Corporation
- 当前专利权人地址: US CT Norwalk
- 代理机构: Fay Sharpe LLP
- 主分类号: H01L29/08
- IPC分类号: H01L29/08
摘要:
A thin-film transistor (TFT) with dual-layer source and drain electrodes is provided. Each source and drain electrode comprises a first layer and a second layer. The first layer has a work function which differs from the energy level of the semiconductor by at least 0.5 eV and the second layer has a work function matching the energy level of the semiconductor. The semiconductor has a short channel length.
公开/授权文献
- US20080121869A1 ORGANIC THIN FILM TRANSISTOR WITH DUAL LAYER ELECTRODES 公开/授权日:2008-05-29
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