发明授权
US07923760B2 Dielectric spacers for metal interconnects and method to form the same
有权
用于金属互连的电介质隔离件及其形成方法
- 专利标题： Dielectric spacers for metal interconnects and method to form the same
- 专利标题（中）： 用于金属互连的电介质隔离件及其形成方法
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申请号： US12630771申请日： 2009-12-03
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公开(公告)号： US07923760B2公开(公告)日： 2011-04-12
- 发明人: Makarem A. Hussein , Boyan Boyanov
- 申请人： Makarem A. Hussein , Boyan Boyanov
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Blakely, Sokoloff, Taylor & Zafman LLP
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L21/70 ; H01L29/40
摘要：
A plurality of metal interconnects incorporating dielectric spacers and a method to form such dielectric spacers are described. In one embodiment, the dielectric spacers adjacent to neighboring metal interconnects are discontiguous from one another. In another embodiment, the dielectric spacers may provide a region upon which un-landed vias may effectively land.
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