发明授权
- 专利标题： Selective silicon-on-insulator isolation structure and method
- 专利标题（中）： 选择性绝缘体上硅绝缘体隔离结构及方法
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申请号： US11871249申请日： 2007-10-12
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公开(公告)号： US07923786B2公开(公告)日： 2011-04-12
- 发明人: An L. Steegen , Maheswaran Surendra , Hsing-Jen Wann , Ying Zhang , Franz Zach , Robert Wong
- 申请人： An L. Steegen , Maheswaran Surendra , Hsing-Jen Wann , Ying Zhang , Franz Zach , Robert Wong
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Schmeiser, Olsen & Watts
- 代理商 Wenjie Li
- 主分类号： H01L21/70
- IPC分类号： H01L21/70
摘要：
A first aspect of the present invention is a method of forming an isolation structure including: (a) providing a semiconductor substrate; (b) forming a buried N-doped region in the substrate; (c) forming a vertical trench in the substrate, the trench extending into the N-doped region; (d) removing the N-doped region to form a lateral trench communicating with and extending perpendicular to the vertical trench; and (e) at least partially filling the lateral trench and filling the vertical trench with one or more insulating materials.
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