发明授权
US07928004B2 Nano imprint technique with increased flexibility with respect to alignment and feature shaping
有权
纳米压印技术在对准和特征成形方面具有增加的灵活性
- 专利标题: Nano imprint technique with increased flexibility with respect to alignment and feature shaping
- 专利标题(中): 纳米压印技术在对准和特征成形方面具有增加的灵活性
-
申请号: US11671688申请日: 2007-02-06
-
公开(公告)号: US07928004B2公开(公告)日: 2011-04-19
- 发明人: Robert Seidel , Carsten Peters , Frank Feustel
- 申请人: Robert Seidel , Carsten Peters , Frank Feustel
- 申请人地址: US TX Austin
- 专利权人: Advanced Micro Devices, Inc.
- 当前专利权人: Advanced Micro Devices, Inc.
- 当前专利权人地址: US TX Austin
- 代理机构: Williams, Morgan Amerson
- 优先权: DE102006030267 20060630
- 主分类号: H01L21/4763
- IPC分类号: H01L21/4763
摘要:
By forming metallization structures on the basis of an imprint technique, in which via openings and trenches may be commonly formed, a significant reduction of process complexity may be achieved due to the omission of at least one further alignment process as required in conventional process techniques. Furthermore, the flexibility and efficiency of imprint lithography may be increased by providing appropriately designed imprint molds in order to provide via openings and trenches exhibiting an increased fill capability, thereby also improving the performance of the finally obtained metallization structures with respect to reliability, resistance against electromigration and the like.
公开/授权文献
信息查询
IPC分类: