发明授权
- 专利标题： Plasma processing method and method for manufacturing an electronic device
- 专利标题（中）： 等离子体处理方法及其制造方法
-
申请号： US10594895申请日： 2005-03-31
-
公开(公告)号： US07928018B2公开(公告)日： 2011-04-19
- 发明人: Tadahiro Ohmi , Akinobu Teramoto , Hiroshi Yamauchi , Yukio Hayakawa
- 申请人： Tadahiro Ohmi , Akinobu Teramoto , Hiroshi Yamauchi , Yukio Hayakawa
- 申请人地址： JP Tsukuba-shi, Ibaraki
- 专利权人： Foundation for Advancement of International Science
- 当前专利权人： Foundation for Advancement of International Science
- 当前专利权人地址： JP Tsukuba-shi, Ibaraki
- 代理机构： Foley & Lardner LLP
- 优先权： JP2004-104237 20040331
- 国际申请： PCT/JP2005/006259 WO 20050331
- 国际公布： WO2005/096363 WO 20051013
- 主分类号： H01L21/31
- IPC分类号： H01L21/31 ; H01L21/469 ; H01L21/02 ; C23C16/00
摘要：
The application of oxynitriding treatment to electronic appliances involve the problem that N2 ions are formed to thereby damage any oxynitride film. It is intended to provide a method of plasma treatment capable of realizing high-quality oxynitriding and to provide a process for producing an electronic appliance in which use is made of the method of plasma treatment. There is provided a method of plasma treatment, comprising generating plasma with a gas for plasma excitation and introducing a treating gas in the plasma to thereby treat a treatment subject, wherein the treating gas contains nitrous oxide gas, this nitrous oxide gas introduced in a plasma of
公开/授权文献
信息查询
IPC分类:
