Invention Grant
US07928487B2 Solid-state imaging device and driving method of solid-state imaging device
有权
固态成像装置及固态成像装置的驱动方法
- Patent Title: Solid-state imaging device and driving method of solid-state imaging device
- Patent Title (中): 固态成像装置及固态成像装置的驱动方法
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Application No.: US12200424Application Date: 2008-08-28
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Publication No.: US07928487B2Publication Date: 2011-04-19
- Inventor: Yoshiaki Kitano , Hideshi Abe , Jun Kuroiwa , Kiyoshi Hirata , Hiroaki Ohki , Nobuhiro Karasawa , Ritsuo Takizawa , Mitsuru Yamashita , Mitsuru Sato , Katsunori Kokubun
- Applicant: Yoshiaki Kitano , Hideshi Abe , Jun Kuroiwa , Kiyoshi Hirata , Hiroaki Ohki , Nobuhiro Karasawa , Ritsuo Takizawa , Mitsuru Yamashita , Mitsuru Sato , Katsunori Kokubun
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: SNR Denton US LLP
- Priority: JP2003-060328 20030306; JP2003-094120 20030331
- Main IPC: H01L27/146
- IPC: H01L27/146
Abstract:
A solid-state imaging device having an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal applied to a light-shielding film formed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor area formed in the center on the surface of a first-conductivity-type semiconductor area constituting a photo-electric conversion area of the light-receiving sensor portion; and areas containing a lower impurity concentration than that of the second-conductivity-type semiconductor area formed on the surface of the first-conductivity-type semiconductor area at the end on the side of the electrode and at the opposite end on the side of a pixel-separation area.
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Information query
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