公开(公告)号：US08598640B2

公开(公告)日：2013-12-03

申请号：US13211362

申请日：2011-08-17

申请人： Yoshiaki Kitano ,  Hideshi Abe ,  Jun Kuroiwa ,  Kiyoshi Hirata ,  Hiroaki Ohki ,  Nobuhiro Karasawa ,  Ritsuo Takizawa ,  Mitsuru Yamashita ,  Mitsuru Sato ,  Katsunori Kokubun

发明人： Yoshiaki Kitano ,  Hideshi Abe ,  Jun Kuroiwa ,  Kiyoshi Hirata ,  Hiroaki Ohki ,  Nobuhiro Karasawa ,  Ritsuo Takizawa ,  Mitsuru Yamashita ,  Mitsuru Sato ,  Katsunori Kokubun

IPC分类号： H01L31/113 ,  H01L27/146

CPC分类号： H01L27/14601 ,  H01L27/14689 ,  H01L27/14806 ,  H04N5/335

摘要： A solid-state imaging device with a structure such that an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal V is applied to a light-shielding film formed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor area is formed in the center on the surface of a first-conductivity-type semiconductor area constituting a photo-electric conversion area of the light-receiving sensor portion; and areas containing a lower impurity concentration than that of the second-conductivity-type semiconductor area is formed on the surface of the first-conductivity-type semiconductor area at the end on the side of the electrode and at the opposite end on the side of a pixel-separation area.

摘要翻译： 具有这样一种结构的固态成像装置，该结构使得用于读取信号电荷的电极设置在构成像素的光接收传感器部分的一侧; 将预定的电压信号V施加到形成为覆盖除了光接收传感器部分之外的图像拾取区域的遮光膜; 第二导电型半导体区域形成在构成光接收传感器部分的光电转换区域的第一导电型半导体区域的表面上的中心; 并且在第一导电型半导体区域的电极侧的端部的表面上形成比第二导电型半导体区域的杂质浓度低的区域， 像素分离区域。

公开(公告)号：US08035708B2

公开(公告)日：2011-10-11

申请号：US12061135

申请日：2008-04-02

申请人： Ritsuo Takizawa ,  Taichi Natori

发明人： Ritsuo Takizawa ,  Taichi Natori

IPC分类号： H04N3/14 ,  H04N9/04 ,  H01L27/00 ,  H01L31/062

CPC分类号： H04N9/045 ,  H01L27/14621 ,  H01L27/14627

摘要： There is provided a solid-state imaging device including a plurality of pixels that are provided on a semiconductor substrate, and that include a plurality of photoelectric-conversion units and metal oxide semiconductor transistors that selectively read signals from the plurality of photoelectric-conversion units, an organic-photoelectric-conversion film disposed on the plurality of photoelectric-conversion units, and an organic-color-filter layer disposed on the plurality of photoelectric-conversion units. Only a signal corresponding to a first color is extracted through the organic-photoelectric-conversion film. Signals corresponding to a plurality of colors not including the first color are extracted by absorption spectroscopy using the organic-color-filter layer.

摘要翻译： 提供了一种固态成像装置，其包括设置在半导体基板上的多个像素，并且包括选择性地从多个光电转换单元读取信号的多个光电转换单元和金属氧化物半导体晶体管， 设置在所述多个光电转换单元上的有机 - 光电转换膜以及设置在所述多个光电转换单元上的有机滤色层。 仅通过有机光电转换膜提取对应于第一颜色的信号。 通过使用有机彩色滤色层的吸收光谱法提取与不包括第一颜色的多种颜色相对应的信号。

公开(公告)号：US20110032376A1

公开(公告)日：2011-02-10

申请号：US12849083

申请日：2010-08-03

申请人： Ritsuo Takizawa

发明人： Ritsuo Takizawa

IPC分类号： H04N5/228 ,  H01L51/48 ,  H01L51/44

CPC分类号： H01L27/307 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14685 ,  H01L27/14687 ,  H04N5/335 ,  H04N9/045

摘要： A solid-state image pickup device is provided which includes a plurality of pixels provided in a semiconductor substrate, the pixels including a plurality of photoelectric conversion portions and MOS transistors which selectively read out signals therefrom, at least one organic photoelectric conversion film on the photoelectric conversion portions, and an isolation region provided in the organic photoelectric conversion film at a position corresponding to between the pixels to perform optical and electrical isolation.

摘要翻译： 提供一种固态图像拾取装置，其包括设置在半导体衬底中的多个像素，所述像素包括多个光电转换部分和选择性地从其中读出信号的MOS晶体管，所述光电转换部件上的至少一个有机光电转换膜 转换部分和设置在有机光电转换膜中的对应于像素之间的位置处的隔离区以进行光学和电隔离。

公开(公告)号：US20090078976A1

公开(公告)日：2009-03-26

申请号：US12277958

申请日：2008-11-25

申请人： Yoshiaki Kitano ,  Hideshi Abe ,  Jun Kuroiwa ,  Kiyoshi Hirata ,  Hiroaki Ohki ,  Nobuhiro Karasawa ,  Ritsuo Takizawa ,  Mitsuru Yamashita ,  Mitsuru Sato ,  Katsunori Kokubun

发明人： Yoshiaki Kitano ,  Hideshi Abe ,  Jun Kuroiwa ,  Kiyoshi Hirata ,  Hiroaki Ohki ,  Nobuhiro Karasawa ,  Ritsuo Takizawa ,  Mitsuru Yamashita ,  Mitsuru Sato ,  Katsunori Kokubun

IPC分类号： H01L27/146

CPC分类号： H01L27/14601 ,  H01L27/14689 ,  H01L27/14806 ,  H04N5/335

摘要： A solid-state imaging device with a structure such that an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal V is applied to a light-shielding film formed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor area is formed in the center on the surface of a first-conductivity-type semiconductor area constituting a photo-electric conversion area of the light-receiving sensor portion; and areas containing a lower impurity concentration than that of the second-conductivity-type semiconductor area is formed on the surface of the first-conductivity-type semiconductor area at the end on the side of the electrode and at the opposite end on the side of a pixel-separation area.

摘要翻译： 具有这样一种结构的固态成像装置，该结构使得用于读取信号电荷的电极设置在构成像素的光接收传感器部分的一侧; 将预定的电压信号V施加到形成为覆盖除了光接收传感器部分之外的图像拾取区域的遮光膜; 第二导电型半导体区域形成在构成光接收传感器部分的光电转换区域的第一导电型半导体区域的表面上的中心; 并且在第一导电型半导体区域的电极侧的端部的表面上形成比第二导电型半导体区域的杂质浓度低的区域， 像素分离区域。

公开(公告)号：US06344092B1

公开(公告)日：2002-02-05

申请号：US09283229

申请日：1999-04-01

申请人： Ritsuo Takizawa

发明人： Ritsuo Takizawa

IPC分类号： H01L2900

CPC分类号： H01L31/186 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02634 ,  H01L21/02658 ,  H01L21/26506 ,  H01L21/26513 ,  H01L27/14689 ,  H01L27/14843 ,  Y02E10/50 ,  Y02P70/521

摘要： Quality of epitaxial semiconductor substrates treated by carbon gettering is evaluated precisely and quickly to use only good-quality ones for manufacturing good-property semiconductor devices, such as solid-state imaging devices. After carbon implanted regions and carbon non-implanted regions are made along the surface of a Si substrate by selectively ion-implanting carbon, a Si epitaxial layer is grown on the surface of the Si substrate to obtain a Si epitaxial substrate. Recombination lifetime or surface photo voltage is measured at a portion of the Si epitaxial layer located above the carbon non-implanted region, and the result is used to evaluate acceptability of the Si epitaxial substrate. Thus, strictly selected good-quality Si epitaxial substrates alone are used to manufacture solid-state imaging devices or other semiconductor devices.

摘要翻译： 通过碳吸收处理的外延半导体衬底的质量被精确且快速地评估，以仅使用质量好的材料来制造诸如固态成像器件的高性能半导体器件。 通过选择性地离子注入碳，在Si衬底的表面上形成碳注入区域和碳未注入区域之后，在Si衬底的表面上生长Si外延层以获得Si外延衬底。 在位于碳非注入区域上方的Si外延层的一部分处测量重组寿命或表面光电压，结果用于评估Si外延衬底的可接受性。 因此，使用严格选择的优质硅外延衬底来制造固态成像器件或其它半导体器件。

公开(公告)号：US07928487B2

公开(公告)日：2011-04-19

申请号：US12200424

申请日：2008-08-28

申请人： Yoshiaki Kitano ,  Hideshi Abe ,  Jun Kuroiwa ,  Kiyoshi Hirata ,  Hiroaki Ohki ,  Nobuhiro Karasawa ,  Ritsuo Takizawa ,  Mitsuru Yamashita ,  Mitsuru Sato ,  Katsunori Kokubun

发明人： Yoshiaki Kitano ,  Hideshi Abe ,  Jun Kuroiwa ,  Kiyoshi Hirata ,  Hiroaki Ohki ,  Nobuhiro Karasawa ,  Ritsuo Takizawa ,  Mitsuru Yamashita ,  Mitsuru Sato ,  Katsunori Kokubun

IPC分类号： H01L27/146

CPC分类号： H01L27/14601 ,  H01L27/14689 ,  H01L27/14806 ,  H04N5/335

摘要： A solid-state imaging device having an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal applied to a light-shielding film formed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor area formed in the center on the surface of a first-conductivity-type semiconductor area constituting a photo-electric conversion area of the light-receiving sensor portion; and areas containing a lower impurity concentration than that of the second-conductivity-type semiconductor area formed on the surface of the first-conductivity-type semiconductor area at the end on the side of the electrode and at the opposite end on the side of a pixel-separation area.

摘要翻译： 具有用于读取信号电荷的电极的固态成像装置设置在构成像素的光接收传感器部分的一侧; 施加到形成为覆盖除了光接收传感器部分之外的图像拾取区域的遮光膜的预定电压信号; 形成在构成光接收传感器部分的光电转换区域的第一导电型半导体区域的表面上的中心的第二导电型半导体区域; 以及在电极侧的端部的第一导电型半导体区域的表面上形成的第二导电型半导体区域的杂质浓度低于位于第一导电型半导体区域 像素分离区域。

公开(公告)号：US20100090303A1

公开(公告)日：2010-04-15

申请号：US12574016

申请日：2009-10-06

申请人： Ritsuo Takizawa

发明人： Ritsuo Takizawa

IPC分类号： H01L31/0232 ,  H01L29/30 ,  H01L21/322 ,  H01L21/762 ,  H01L31/18

CPC分类号： H01L21/76254 ,  H01L21/26506 ,  H01L21/3226 ,  H01L27/14601 ,  H01L27/14621 ,  H01L27/1464 ,  H01L27/14683

摘要： A SOI substrate includes a silicon substrate, a silicon oxide layer arranged on the silicon substrate, a silicon layer arranged on the silicon oxide layer, a gettering layer arranged in the silicon substrate, and a damaged layer formed of an impurity-doped region arranged in the silicon oxide layer.

摘要翻译： SOI衬底包括硅衬底，布置在硅衬底上的氧化硅层，布置在氧化硅层上的硅层，布置在硅衬底中的吸杂层和由布置在硅衬底中的杂质掺杂区形成的损伤层 氧化硅层。

公开(公告)号：US20090072275A1

公开(公告)日：2009-03-19

申请号：US12323006

申请日：2008-11-25

申请人： Yoshiaki Kitano ,  Hideshi Abe ,  Jun Kuroiwa ,  Kiyoshi Hirata ,  Hiroaki Ohki ,  Nobuhiro Karasawa ,  Ritsuo Takizawa ,  Mitsuru Yamashita ,  Mitsuru Sato ,  Katsunori Kokubun

发明人： Yoshiaki Kitano ,  Hideshi Abe ,  Jun Kuroiwa ,  Kiyoshi Hirata ,  Hiroaki Ohki ,  Nobuhiro Karasawa ,  Ritsuo Takizawa ,  Mitsuru Yamashita ,  Mitsuru Sato ,  Katsunori Kokubun

IPC分类号： H01L27/148

CPC分类号： H01L27/14601 ,  H01L27/14689 ,  H01L27/14806 ,  H04N5/335

摘要： A solid-state imaging device with a structure such that an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal V is applied to a light-shielding film formed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor area is formed in the center on the surface of a first-conductivity-type semiconductor area constituting a photo-electric conversion area of the light-receiving sensor portion; and areas containing a lower impurity concentration than that of the second-conductivity-type semiconductor area is formed on the surface of the first-conductivity-type semiconductor area at the end on the side of the electrode and at the opposite end on the side of a pixel-separation area.

公开(公告)号：US07473977B2

公开(公告)日：2009-01-06

申请号：US10548182

申请日：2004-03-05

申请人： Yoshiaki Kitano ,  Hideshi Abe ,  Jun Kuroiwa ,  Kiyoshi Hirata ,  Hiroaki Ohki ,  Nobuhiro Karasawa ,  Ritsuo Takizawa ,  Mitsuru Yamashita ,  Mitsuru Sato ,  Katsunori Kokubun

发明人： Yoshiaki Kitano ,  Hideshi Abe ,  Jun Kuroiwa ,  Kiyoshi Hirata ,  Hiroaki Ohki ,  Nobuhiro Karasawa ,  Ritsuo Takizawa ,  Mitsuru Yamashita ,  Mitsuru Sato ,  Katsunori Kokubun

IPC分类号： H01L31/06

CPC分类号： H01L27/14601 ,  H01L27/14689 ,  H01L27/14806 ,  H04N5/335

摘要： A solid-state imaging device that has a satisfactory noise characteristic and readout characteristic is provided by improving the noise characteristic and readout characteristic in a well balanced way.The solid-state imaging device has such a structure that an electrode 8 for reading a signal charge is provided on one side of a light-receiving sensor portion 11 constituting a pixel; a predetermined voltage signal V is applied to a light-shielding film 9 formed to cover an image pickup area except the light-receiving sensor portion 11; a second-conductivity-type semiconductor area 6 is formed in the center on the surface of a first-conductivity-type semiconductor area 2 constituting a photo-electric conversion area of the light-receiving sensor portion 11; and areas 10 (10A, 10B) containing a lower impurity concentration than that of the second-conductivity-type semiconductor area 6 is formed on the surface of the first-conductivity-type semiconductor area 2 at the end on the side of the electrode 8 and at the opposite end on the side of a pixel-separation area 3.

摘要翻译： 通过以良好平衡的方式改善噪声特性和读出特性，提供具有令人满意的噪声特性和读出特性的固态成像装置。 固态成像装置具有这样的结构，即在构成像素的光接收传感器部分11的一侧设置用于读取信号电荷的电极8; 将预定电压信号V施加到形成为覆盖除了光接收传感器部分11之外的图像拾取区域的遮光膜9; 第二导电型半导体区域6形成在构成光接收传感器部11的光电转换区域的第一导电型半导体区域2的表面上的中心; 并且在第一导电型半导体区域2的电极8侧的端部的表面上形成包含比第二导电型半导体区域6的杂质浓度低的区域10（10A，10B） 并且在像素分离区域3侧的相对端。

公开(公告)号：US20060170009A1

公开(公告)日：2006-08-03

申请号：US10548182

申请日：2004-03-05

申请人： Yoshiaki Kitano ,  Hideshi Abe ,  Jun Kuroiwa ,  Kiyoshi Hirata ,  Hiroaki Ohki ,  Nobuhiro Karasawa ,  Ritsuo Takizawa ,  Mitsuru Yamashita ,  Mitsuru Sato ,  Katsunori Kokubun

发明人： Yoshiaki Kitano ,  Hideshi Abe ,  Jun Kuroiwa ,  Kiyoshi Hirata ,  Hiroaki Ohki ,  Nobuhiro Karasawa ,  Ritsuo Takizawa ,  Mitsuru Yamashita ,  Mitsuru Sato ,  Katsunori Kokubun

IPC分类号： H01L29/768

CPC分类号： H01L27/14601 ,  H01L27/14689 ,  H01L27/14806 ,  H04N5/335

摘要： A solid-state imaging device that has a satisfactory noise characteristic and readout characteristic is provided by improving the noise characteristic and readout characteristic in a well balanced way. The solid-state imaging device has such a structure that an electrode 8 for reading a signal charge is provided on one side of a light-receiving sensor portion 11 constituting a pixel; a predetermined voltage signal V is applied to a light-shielding film 9 formed to cover an image pickup area except the light-receiving sensor portion 11; a second-conductivity-type semiconductor area 6 is formed in the center on the surface of a first-conductivity-type semiconductor area 2 constituting a photo-electric conversion area of the light-receiving sensor portion 11; and areas 10 (10A, 10B) containing a lower impurity concentration than that of the second-conductivity-type semiconductor area 6 is formed on the surface of the first-conductivity-type semiconductor area 2 at the end on the side of the electrode 8 and at the opposite end on the side of a pixel-separation area 3.

摘要翻译： 通过以良好平衡的方式改善噪声特性和读出特性，提供具有令人满意的噪声特性和读出特性的固态成像装置。 固态成像装置具有这样的结构，即在构成像素的光接收传感器部分11的一侧设置用于读取信号电荷的电极8; 将预定电压信号V施加到形成为覆盖除了光接收传感器部分11之外的图像拾取区域的遮光膜9; 第二导电型半导体区域6形成在构成光接收传感器部11的光电转换区域的第一导电型半导体区域2的表面上的中心; 并且在第一导电型半导体区域2的表面上形成包含比第二导电型半导体区域6低的杂质浓度的区域10（10A，10B） 电极8并且位于像素分离区域3侧的相对端。