发明授权
- 专利标题： Plasma processing apparatus
- 专利标题（中）： 等离子体处理装置
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申请号： US11441290申请日： 2006-05-24
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公开(公告)号： US07935186B2公开(公告)日： 2011-05-03
- 发明人: Qing Qian
- 申请人： Qing Qian
- 申请人地址： KY George Town, Grand Cayman
- 专利权人： Advanced Micro-Fabrication Equipment, Inc. Asia
- 当前专利权人： Advanced Micro-Fabrication Equipment, Inc. Asia
- 当前专利权人地址： KY George Town, Grand Cayman
- 代理机构： Nixon Peabody LLP.
- 代理商 Joseph Bach, Esq.
- 优先权： CN200510028567 20050805
- 主分类号： C23C16/00
- IPC分类号： C23C16/00 ; C23F1/00 ; H01L21/306
摘要：
A plasma processing apparatus is described and which includes a chamber having at least two processing stations which are separated by a wall. At least one channel is formed in the wall, and wherein the channel has a width to length ratio of less than about 1:3.
公开/授权文献
- US20070028840A1 Plasma processing apparatus 公开/授权日：2007-02-08