公开(公告)号：US07935186B2

公开(公告)日：2011-05-03

申请号：US11441290

申请日：2006-05-24

申请人： Qing Qian

发明人： Qing Qian

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01J37/3244 ,  H01J37/32449 ,  H01J37/32458

摘要： A plasma processing apparatus is described and which includes a chamber having at least two processing stations which are separated by a wall. At least one channel is formed in the wall, and wherein the channel has a width to length ratio of less than about 1:3.

摘要翻译： 描述了一种等离子体处理装置，其包括具有由壁分隔的至少两个处理站的室。 在壁中形成至少一个通道，并且其中通道具有小于约1:3的宽度与长度之比。

公开(公告)号：US20070085483A1

公开(公告)日：2007-04-19

申请号：US11546041

申请日：2006-10-10

申请人： Tom Ni ,  Jinyuan Chen ,  Qing Qian ,  Yuehong Fu ,  Zhaoyang Xu ,  Xusheng Zhou ,  Ye Wang

发明人： Tom Ni ,  Jinyuan Chen ,  Qing Qian ,  Yuehong Fu ,  Zhaoyang Xu ,  Xusheng Zhou ,  Ye Wang

IPC分类号： H01J7/24 ,  C23F1/00 ,  C23C16/00

CPC分类号： H05H1/03 ,  C23C16/4404 ,  C23C16/5096 ,  H01J37/32623 ,  H01J37/32642

摘要： A plasma confinement apparatus, and method for confining a plasma are described and which includes, in one form of the invention, a plurality of electrically insulated components which are disposed in predetermined spaced relation, one relative to the others, and surrounding a processing region of a plasma processing apparatus, and wherein a plurality of passageways are defined between the respective insulated components; and at least one electrically conductive and grounded component forms an electrical field shielding for the processing region.

摘要翻译： 描述了一种用于限制等离子体的等离子体限制装置和方法，其包括在本发明的一种形式中，多个电绝缘部件以预定的间隔关系设置，一个相对于其它部件，并且围绕 等离子体处理装置，并且其中在相应的绝缘部件之间限定多个通道; 并且至少一个导电和接地部件形成用于处理区域的电场屏蔽。

公开(公告)号：US06946667B2

公开(公告)日：2005-09-20

申请号：US10299443

申请日：2002-11-19

申请人： Jiong Chen ,  Zhming Wan ,  Qing Qian

发明人： Jiong Chen ,  Zhming Wan ,  Qing Qian

IPC分类号： H01J37/317 ,  G21K5/10 ,  H01J37/08

CPC分类号： H01J37/3171 ,  H01J37/244 ,  H01J2237/024 ,  H01J2237/04756 ,  H01J2237/057 ,  H01J2237/24405 ,  H01J2237/24528

摘要： An ion implantation method is disclosed in this invention. The disclosed method is for implanting a target wafer with ions extracted from an ion source traveling along an original ion beam path. The method includes steps of a) employing a set of deceleration electrodes disposed along the original ion beam path before the target wafer for decelerating and deflecting the ion beam to the target wafer; and b) employing a charged particle deflecting means disposed between the ion source and the set of deceleration electrodes for deflecting the ion beam away from original ion beam path and projecting to the set of electrodes with an incident angle for the set of electrodes to deflect the ion beam back to the original ion beam path for implanting the target wafer.

摘要翻译： 在本发明中公开了一种离子注入方法。 所公开的方法是用离子源从原始离子束路径移动的离子注入目标晶片。 该方法包括以下步骤：a）在目标晶片之前沿着原始离子束路径采用一组减速电极，用于使离子束减速和偏转到目标晶圆; 以及b）使用设置在所述离子源和所述一组减速电极之间的带电粒子偏转装置，用于使所述离子束偏离原始离子束路径，并以所述电极组的入射角向所述电极组突出以使所述电极组偏转 离子束返回到原始离子束路径，用于植入目标晶片。

公开(公告)号：US08414702B2

公开(公告)日：2013-04-09

申请号：US13082340

申请日：2011-04-07

申请人： Qing Qian

发明人： Qing Qian

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01J37/3244 ,  H01J37/32449 ,  H01J37/32458

摘要： A plasma processing apparatus is described and which includes a chamber having at least two processing stations which are separated by a wall. At least one channel is formed in the wall, and wherein the channel has a width to length ratio of less than about 1:3.

摘要翻译： 描述了一种等离子体处理装置，其包括具有由壁分隔的至少两个处理站的室。 在壁中形成至少一个通道，并且其中通道具有小于约1:3的宽度与长度之比。

公开(公告)号：US09761340B2

公开(公告)日：2017-09-12

申请号：US15275430

申请日：2016-09-25

申请人： Qing Qian

发明人： Qing Qian

IPC分类号： H01L31/08 ,  H01L31/18 ,  G01N23/207 ,  G21K1/00

CPC分类号： G21K1/00 ,  G01N23/2076 ,  G21K1/06 ,  G21K2201/062 ,  G21K2201/064 ,  G21K2201/067 ,  H01L31/085 ,  H01L31/1804

摘要： A method of preparing two dimension bent X-ray crystal analyzers in strips feature is provided. A crystal wafer in strips is bonded to a curved substrate which offers the desired focus length. A crystal wafer in strips is pressed against the surface of the substrate forming curved shape by anodic bonding or glue bonding. The bonding is permanently formed between crystal wafer and its substrate surface, which makes crystal wafer has same curvature as previously prepared substrate.

公开(公告)号：US08608851B2

公开(公告)日：2013-12-17

申请号：US11546041

申请日：2006-10-10

申请人： Tom Ni ,  Jinyuan Chen ,  Qing Qian ,  Yuehong Fu ,  Zhaoyang Xu ,  Xusheng Zhou ,  Ye Wang

发明人： Tom Ni ,  Jinyuan Chen ,  Qing Qian ,  Yuehong Fu ,  Zhaoyang Xu ,  Xusheng Zhou ,  Ye Wang

IPC分类号： C23C16/00

CPC分类号： H05H1/03 ,  C23C16/4404 ,  C23C16/5096 ,  H01J37/32623 ,  H01J37/32642

摘要： A plasma confinement apparatus, and method for confining a plasma are described and which includes, in one form of the invention, a plurality of electrically insulated components which are disposed in predetermined spaced relation, one relative to the others, and surrounding a processing region of a plasma processing apparatus, and wherein a plurality of passageways are defined between the respective insulated components; and at least one electrically conductive and grounded component forms an electrical field shielding for the processing region.

摘要翻译： 描述了一种用于限制等离子体的等离子体限制装置和方法，其包括在本发明的一种形式中，多个电绝缘部件以预定的间隔关系设置，一个相对于其它部件，并且围绕 等离子体处理装置，并且其中在相应的绝缘部件之间限定多个通道; 并且至少一个导电和接地部件形成用于处理区域的电场屏蔽。

公开(公告)号：US20070028840A1

公开(公告)日：2007-02-08

申请号：US11441290

申请日：2006-05-24

申请人： Qing Qian

发明人： Qing Qian

IPC分类号： C23C16/00

CPC分类号： H01J37/3244 ,  H01J37/32449 ,  H01J37/32458

摘要： A plasma processing apparatus is described and which includes a chamber having at least two processing stations which are separated by a wall. At least one channel is formed in the wall, and wherein the channel has a width to length ratio of less than about 1:3.

摘要翻译： 描述了一种等离子体处理装置，其包括具有由壁分隔的至少两个处理站的室。 在壁中形成至少一个通道，并且其中通道具有小于约1:3的宽度与长度之比。