A method for manufacturing an integrated circuit including at least one storage cell is provided. The method includes providing a substrate having a first and second side, and a plurality of parallel trenches so that a dividing wall is formed between adjacent trenches, filling the trenches with an insulating compound, providing a first insulating layer having a first and second side on the top surface of the dividing wall, wherein the first side is arranged on the substrate's first side, providing a first conductive layer having a first and second side, wherein the first side is arranged on the insulating layer's second side, wherein the conductive layer protrudes from the substrate surface, providing a second conductive layer having a first and second side, wherein the first side is located on the first conductive layer's second side, and removing parts of the second conductive layer by an anisotropic etching means.