发明授权
- 专利标题： Integrated circuits, micromechanical devices, and method of making same
- 专利标题（中）： 集成电路，微机械器件及其制造方法
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申请号： US11839890申请日： 2007-08-16
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公开(公告)号： US07935634B2公开(公告)日： 2011-05-03
- 发明人: Maik Liebau , Thomas Betzl , Olaf Storbeck , Georg Duesberg , Guenther Aichmayr
- 申请人： Maik Liebau , Thomas Betzl , Olaf Storbeck , Georg Duesberg , Guenther Aichmayr
- 申请人地址： DE Munich
- 专利权人： Qimonda AG
- 当前专利权人： Qimonda AG
- 当前专利权人地址： DE Munich
- 代理机构： Patterson & Sheridan, LLP
- 主分类号： H01L21/302
- IPC分类号： H01L21/302 ; H01L21/461
摘要：
A method of making an integrated circuit comprises providing a substrate and forming a structure on the substrate comprising a first enclosed portion of a carbon material and a second portion of the carbon material, wherein an intersection of the first and second portion of the carbon material has a defined dimension. The method further comprises processing the substrate with a plasma comprising hydrogen in order to etch the second portion of the carbon material, wherein the defined dimension of the intersection of the first and second portion of the carbon material substantially suppresses etching of the first enclosed portion of the carbon material in a self-limiting way.