发明授权
- 专利标题： Ion beam irradiating apparatus, and method of producing semiconductor device
- 专利标题（中）： 离子束照射装置及半导体装置的制造方法
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申请号： US12304241申请日： 2007-06-12
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公开(公告)号： US07935944B2公开(公告)日： 2011-05-03
- 发明人: Junzo Ishikawa , Dan Nicolaescu , Yasuhito Gotoh , Shigeki Sakai
- 申请人： Junzo Ishikawa , Dan Nicolaescu , Yasuhito Gotoh , Shigeki Sakai
- 申请人地址： JP Kyoto JP Kyoto
- 专利权人： Kyoto University,Nissin Ion Equipment Co., Ltd.
- 当前专利权人： Kyoto University,Nissin Ion Equipment Co., Ltd.
- 当前专利权人地址： JP Kyoto JP Kyoto
- 代理机构： Osha • Liang LLP
- 优先权： JP2006-162394 20060612
- 国际申请： PCT/JP2007/062200 WO 20070612
- 国际公布： WO2007/145355 WO 20071221
- 主分类号： G21G1/10
- IPC分类号： G21G1/10
摘要：
An ion beam irradiating apparatus has a field emission electron source 10 which is disposed in a vicinity of a path of the ion beam 2, and which emits electrons 12. The field emission electron source 10 is placed in a direction along which an incident angle formed by the electrons 12 emitted from the electron source 10 and a direction parallel to the traveling direction of the ion beam 2 is in the range from −15 deg. to +45 deg. (an inward direction of the ion beam 2 is +, and an outward direction is −).
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