发明授权
- 专利标题： On-chip RF shields with backside redistribution lines
- 专利标题（中）： 具有背面再分配线的片上RF屏蔽
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申请号： US12242487申请日： 2008-09-30
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公开(公告)号： US07936052B2公开(公告)日： 2011-05-03
- 发明人: Hans-Joachim Barth , Jens Pohl , Gottfried Beer , Heinrich Koerner
- 申请人： Hans-Joachim Barth , Jens Pohl , Gottfried Beer , Heinrich Koerner
- 申请人地址： DE Neubiberg
- 专利权人： Infineon Technologies AG
- 当前专利权人： Infineon Technologies AG
- 当前专利权人地址： DE Neubiberg
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L29/72
- IPC分类号： H01L29/72
摘要：
Structures of a system on chip and methods of forming a system on chip are disclosed. In one embodiment, a method of fabricating the system on chip includes forming a through substrate opening from a back surface of a substrate, the through substrate opening disposed between a first and a second region, the first region comprising devices for RF circuitry and the second region comprising devices for other circuitry. The method further includes forming patterns for redistribution lines on a photo resist layer, the photo resist layer disposed under the back surface, and filling the through substrate opening and the patterns for redistribution lines with a conductive material.
公开/授权文献
- US20100078776A1 On-Chip RF Shields with Backside Redistribution Lines 公开/授权日：2010-04-01
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