发明授权
- 专利标题： Light-emitting-diode chip comprising a sequence of GAN-based epitaxial layers which emit radiation and a method for producing the same
- 专利标题（中）： 包含发射辐射的基于GAN的外延层序列的发光二极管芯片及其制造方法
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申请号： US11755284申请日： 2007-05-30
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公开(公告)号： US07939844B2公开(公告)日： 2011-05-10
- 发明人: Berthold Hahn , Ulrich Jacob , Hans-Jürgen Lugauer , Manfred Mundbrod-Vangerow
- 申请人： Berthold Hahn , Ulrich Jacob , Hans-Jürgen Lugauer , Manfred Mundbrod-Vangerow
- 申请人地址： DE Munich
- 专利权人： OSRAM GmbH
- 当前专利权人： OSRAM GmbH
- 当前专利权人地址： DE Munich
- 代理机构： Fish & Richardson P.C.
- 优先权： DE10026254 20000526
- 主分类号： H01L33/00
- IPC分类号： H01L33/00
摘要：
A light-emitting diode chip (1) comprises a GaN-based, radiation-emitting epitaxial layer sequence (3), an active region (19), an n-doped layer (4) and a p-doped layer (5). The p-doped layer (5) is provided, on its main surface (9) facing away from the active region (19), with a reflective contact metallization (6) comprising a radioparent contact layer (15) and a reflective layer (16). Methods for fabricating LED chips of this type by thin-film technology are provided, as are LED components containing such LED chips.
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