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1.发明授权Light-emitting-diode chip comprising a sequence of GaN-based epitaxial layers which emit radiation and a method for producing the same 有权包含发射辐射的GaN系外延层序列的发光二极管芯片及其制造方法公开(公告)号：US08436393B2
公开(公告)日：2013-05-07
申请号：US13079235
申请日：2011-04-04
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L24/73 , H01L33/32 , H01L33/405 , H01L33/42 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2924/01067 , H01L2924/12041 , H01L2924/00014 , H01L2924/00012
摘要： A light-emitting diode chip comprises a GaN-based, radiation-emitting epitaxial layer sequence, an active region, an n-doped layer and a p-doped layer. The p-doped layer is provided, on its main surface facing away from the active region, with a reflective contact metallization comprising a radioparent contact layer and a reflective layer. Methods for fabricating LED chips of this type by thin-film technology are provided, as are LED components containing such LED chips.
摘要翻译： 发光二极管芯片包括基于GaN的发射辐射的外延层序列，有源区，n掺杂层和p掺杂层。 在其主表面上设置p掺杂层，其背离有源区，具有包括放射性接触层和反射层的反射接触金属化。 提供了通过薄膜技术制造这种类型的LED芯片的方法，以及包含这种LED芯片的LED组件。
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2.发明授权Light-emitting-diode chip comprising a sequence of GaN-based epitaxial layers which emit radiation and a method for producing the same 有权包含发射辐射的GaN系外延层序列的发光二极管芯片及其制造方法公开(公告)号：US07265392B2
公开(公告)日：2007-09-04
申请号：US10296596
申请日：2001-05-28
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L24/73 , H01L33/32 , H01L33/405 , H01L33/42 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2924/01067 , H01L2924/12041 , H01L2924/00014 , H01L2924/00012
摘要： A light-emitting diode chip (1) comprises a GaN-based, radiation-emitting epitaxial layer sequence (3), an active region (19), an n-doped layer (4) and a p-doped layer (5). The p-doped layer (5) is provided, on its main surface (9) facing away from the active region (19), with a reflective contact metallization (6) comprising a radioparent contact layer (15) and a reflective layer (16). Methods for fabricating LED chips of this type by thin-film technology are provided, as are LED components containing such LED chips.
摘要翻译： 发光二极管芯片（1）包括GaN基辐射发射外延层序列（3），有源区（19），n掺杂层（4）和p掺杂层（5）。 p型掺杂层（5）在其主表面（9）上面向远离有源区（19）的反射接触金属化（6）提供，反射接触金属化（6）包括一个放射性接触层（15）和一个反射层（16） ）。 提供了通过薄膜技术制造这种类型的LED芯片的方法，以及包含这种LED芯片的LED组件。
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3.发明授权Light-emitting-diode chip comprising a sequence of GAN-based epitaxial layers which emit radiation and a method for producing the same 有权包含发射辐射的基于GAN的外延层序列的发光二极管芯片及其制造方法公开(公告)号：US07939844B2
公开(公告)日：2011-05-10
申请号：US11755284
申请日：2007-05-30
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L24/73 , H01L33/32 , H01L33/405 , H01L33/42 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2924/01067 , H01L2924/12041 , H01L2924/00014 , H01L2924/00012
摘要： A light-emitting diode chip (1) comprises a GaN-based, radiation-emitting epitaxial layer sequence (3), an active region (19), an n-doped layer (4) and a p-doped layer (5). The p-doped layer (5) is provided, on its main surface (9) facing away from the active region (19), with a reflective contact metallization (6) comprising a radioparent contact layer (15) and a reflective layer (16). Methods for fabricating LED chips of this type by thin-film technology are provided, as are LED components containing such LED chips.
摘要翻译： 发光二极管芯片（1）包括GaN基辐射发射外延层序列（3），有源区（19），n掺杂层（4）和p掺杂层（5）。 p型掺杂层（5）在其主表面（9）上面向远离有源区（19）的反射接触金属化（6）提供，反射接触金属化（6）包括一个放射性接触层（15）和一个反射层（16） ）。 提供了通过薄膜技术制造这种类型的LED芯片的方法，以及包含这种LED芯片的LED组件。
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4.发明申请LIGHT-EMITTING-DIODE CHIP COMPRISING A SEQUENCE OF GaN-BASED EPITAXIAL LAYERS WHICH EMIT RADIATION AND A METHOD FOR PRODUCING THE SAME 有权发光二极管芯片，其包含发射辐射的GaN基外延层的序列及其生产方法公开(公告)号：US20110175058A1
公开(公告)日：2011-07-21
申请号：US13079235
申请日：2011-04-04
CPC分类号： H01L33/0079 , H01L24/73 , H01L33/32 , H01L33/405 , H01L33/42 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2924/01067 , H01L2924/12041 , H01L2924/00014 , H01L2924/00012
摘要： A light-emitting diode chip comprises a GaN-based, radiation-emitting epitaxial layer sequence, an active region, an n-doped layer and a p-doped layer. The p-doped layer is provided, on its main surface facing away from the active region, with a reflective contact metallization comprising a radioparent contact layer and a reflective layer. Methods for fabricating LED chips of this type by thin-film technology are provided, as are LED components containing such LED chips.
摘要翻译： 发光二极管芯片包括基于GaN的发射辐射的外延层序列，有源区，n掺杂层和p掺杂层。 在其主表面上设置p掺杂层，其背离有源区，具有包括放射性接触层和反射层的反射接触金属化。 提供了通过薄膜技术制造这种类型的LED芯片的方法，以及包含这种LED芯片的LED组件。
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5.发明申请LIGHT-EMITTING-DIODE CHIP COMPRISING A SEQUENCE OF GAN-BASED EPITAXIAL LAYERS WHICH EMIT RADIATION AND A METHOD FOR PRODUCING THE SAME 有权发射二极管芯片，其包含发射辐射的基于GAN的外延层的序列及其生产方法公开(公告)号：US20070221936A1
公开(公告)日：2007-09-27
申请号：US11755284
申请日：2007-05-30
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L24/73 , H01L33/32 , H01L33/405 , H01L33/42 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2924/01067 , H01L2924/12041 , H01L2924/00014 , H01L2924/00012
摘要： A light-emitting diode chip (1) comprises a GaN-based, radiation-emitting epitaxial layer sequence (3), an active region (19), an n-doped layer (4) and a -doped layer (5). The p-doped layer (5) is provided, on its main surface (9)facing away from the active region (19), with a reflective contact metallization (6)comprising a radioparent contact layer (15) and a reflective layer (16). Methods for fabricating LED chips of this type by thin-film technology are provided, as are LED components containing such LED chips.
摘要翻译： 发光二极管芯片（1）包括GaN基辐射发射外延层序列（3），有源区（19），n掺杂层（4）和掺杂层（5）。 p型掺杂层（5）在其主表面（9）上面向远离有源区（19）的反射接触金属化（6）提供，反射接触金属化（6）包括一个放射性接触层（15）和一个反射层（16） ）。 提供了通过薄膜技术制造这种类型的LED芯片的方法，以及包含这种LED芯片的LED组件。
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公开(公告)号：US06891199B2
公开(公告)日：2005-05-10
申请号：US10343851
申请日：2001-07-24
申请人： Johannes Baur , Dominik Eisert , Michael Fehrer , Berthold Hahn , Volker Harle , Ulrich Jacob , Werner Plass , Uwe Strauss , Johannes Völkl , Ulrich Zehnder
发明人： Johannes Baur , Dominik Eisert , Michael Fehrer , Berthold Hahn , Volker Harle , Ulrich Jacob , Werner Plass , Uwe Strauss , Johannes Völkl , Ulrich Zehnder
CPC分类号： H01L33/20 , H01L33/24 , H01L2224/48091 , H01L2924/00014
摘要： Proposed for high-performance light-emitting diodes are semiconductor chips (1) whose longitudinal sides are substantially longer than their transverse sides. Light extraction can be substantially improved in this manner.
摘要翻译： 用于高性能发光二极管的半导体芯片（1）的纵向边比其横向侧面大得多。 以这种方式可以显着改善光提取。
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公开(公告)号：US07015514B2
公开(公告)日：2006-03-21
申请号：US10451836
申请日：2002-01-15
申请人： Johannes Baur , Dominik Eisert , Michael Fehrer , Berthold Hahn , Volker Härle , Ulrich Jacob , Werner Plass , Uwe Strauss , Johannes Völkl , Ulrich Zehnder
发明人： Johannes Baur , Dominik Eisert , Michael Fehrer , Berthold Hahn , Volker Härle , Ulrich Jacob , Werner Plass , Uwe Strauss , Johannes Völkl , Ulrich Zehnder
IPC分类号： H01L33/00
CPC分类号： H01L33/644 , F21K9/23 , F21V29/70 , F21Y2115/10 , H01L25/0753 , H01L33/483 , H01L33/507 , H01L33/58 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A light-emitting diode (1) has a lens body (3) that is fabricated from an inorganic solid. Fastened on the lens body (3) are semiconductor chips (2) that emit light beams (18). Furthermore, the light-emitting diode (1) is provided with a housing (20) that can be screwed into a conventional lamp holder via a thread (21).
摘要翻译： 发光二极管（1）具有由无机固体制成的透镜体（3）。 在透镜体（3）上固定有发射光束（18）的半导体芯片（2）。 此外，发光二极管（1）设置有可经由螺纹（21）拧入常规灯座的壳体（20）。
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公开(公告)号：US06897488B2
公开(公告)日：2005-05-24
申请号：US10415810
申请日：2001-11-06
申请人： Johannes Baur , Dominik Eisert , Michael Fehrer , Berthold Hahn , Volker Härle , Ulrich Jacob , Raimund Oberschmid , Werner Plass , Uwe Strauss , Johannes Völkl , Ulrich Zehnder
发明人： Johannes Baur , Dominik Eisert , Michael Fehrer , Berthold Hahn , Volker Härle , Ulrich Jacob , Raimund Oberschmid , Werner Plass , Uwe Strauss , Johannes Völkl , Ulrich Zehnder
CPC分类号： H01L33/20 , H01L33/02 , H01L33/08 , H01L33/405
摘要： A light-emitting chip (3) has a lens-type coupling-out window (4), whose base area (5) is provided with a mirror area (6). Arranged on a coupling-out area (7) of the coupling-out window (4) is a layer sequence (9), with a photon-emitting pn junction (10). The photons emitted by the pn junction are reflected at the mirror area (6) and can leave the coupling-out window (4) through the coupling-out area (7).
摘要翻译： 发光芯片（3）具有透镜型耦合输出窗（4），其基部区域（5）设置有反射镜区域（6）。 布置在耦合出窗口（4）的耦合输出区域（7）上的是具有光子发射pn结（10）的层序列（9）。 由pn结发射的光子在反射镜区域（6）处被反射，并且可以通过耦合输出区域（7）离开耦合出的窗口（4）。
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公开(公告)号：US20120091491A1
公开(公告)日：2012-04-19
申请号：US13276024
申请日：2011-10-18
申请人： Ulrich Jacob , Gertrud Kräuter , Andreas Plössl
发明人： Ulrich Jacob , Gertrud Kräuter , Andreas Plössl
IPC分类号： H01L33/50
CPC分类号： H01L33/46 , H01L33/32 , H01L33/42 , H01L33/54 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2924/00014 , H01L2924/00
摘要： A radiation-emitting semiconductor component, having a layer structure which includes an active layer which, in operation, emits radiation with a spectral distribution, and electrical contacts for applying a current to the layer structure, includes a coating layer which at least partially surrounds the active layer and holds back a short-wave component of the emitted radiation.
摘要翻译： 具有层结构的辐射发射半导体部件包括在工作中发射具有光谱分布的辐射的有源层和用于向层结构施加电流的电触点的层结构，其包括至少部分地围绕 有源层并且阻止所发射的辐射的短波分量。
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公开(公告)号：US08039855B2
公开(公告)日：2011-10-18
申请号：US10472023
申请日：2002-03-15
申请人： Ulrich Jacob , Gertrud Kräuter , Andreas Plössl
发明人： Ulrich Jacob , Gertrud Kräuter , Andreas Plössl
IPC分类号： H01L33/00
CPC分类号： H01L33/46 , H01L33/32 , H01L33/42 , H01L33/54 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2924/00014 , H01L2924/00
摘要： A radiation-emitting semiconductor component, having a layer structure (30) which includes an active layer (32) which, in operation, emits radiation with a spectral distribution (60), and electrical contacts (36, 38, 40) for applying a current to the layer structure (30), includes a coating layer (44) which at least partially surrounds the active layer (32) and holds back a short-wave component of the emitted radiation (60).
摘要翻译： 一种辐射发射半导体部件，具有层结构（30），该层结构（30）包括在工作中发射具有光谱分布（60）的辐射的有源层（32）和用于施加光谱分布的电触点（36,38,40） 电流到层结构（30）包括至少部分地围绕有源层（32）并阻止所发射的辐射（60）的短波分量的涂层（44）。
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