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1.发明授权Light-emitting-diode chip comprising a sequence of GaN-based epitaxial layers which emit radiation and a method for producing the same 有权包含发射辐射的GaN系外延层序列的发光二极管芯片及其制造方法公开(公告)号：US08436393B2
公开(公告)日：2013-05-07
申请号：US13079235
申请日：2011-04-04
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L24/73 , H01L33/32 , H01L33/405 , H01L33/42 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2924/01067 , H01L2924/12041 , H01L2924/00014 , H01L2924/00012
摘要： A light-emitting diode chip comprises a GaN-based, radiation-emitting epitaxial layer sequence, an active region, an n-doped layer and a p-doped layer. The p-doped layer is provided, on its main surface facing away from the active region, with a reflective contact metallization comprising a radioparent contact layer and a reflective layer. Methods for fabricating LED chips of this type by thin-film technology are provided, as are LED components containing such LED chips.
摘要翻译： 发光二极管芯片包括基于GaN的发射辐射的外延层序列，有源区，n掺杂层和p掺杂层。 在其主表面上设置p掺杂层，其背离有源区，具有包括放射性接触层和反射层的反射接触金属化。 提供了通过薄膜技术制造这种类型的LED芯片的方法，以及包含这种LED芯片的LED组件。
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2.发明授权Light-emitting-diode chip comprising a sequence of GaN-based epitaxial layers which emit radiation and a method for producing the same 有权包含发射辐射的GaN系外延层序列的发光二极管芯片及其制造方法公开(公告)号：US07265392B2
公开(公告)日：2007-09-04
申请号：US10296596
申请日：2001-05-28
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L24/73 , H01L33/32 , H01L33/405 , H01L33/42 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2924/01067 , H01L2924/12041 , H01L2924/00014 , H01L2924/00012
摘要： A light-emitting diode chip (1) comprises a GaN-based, radiation-emitting epitaxial layer sequence (3), an active region (19), an n-doped layer (4) and a p-doped layer (5). The p-doped layer (5) is provided, on its main surface (9) facing away from the active region (19), with a reflective contact metallization (6) comprising a radioparent contact layer (15) and a reflective layer (16). Methods for fabricating LED chips of this type by thin-film technology are provided, as are LED components containing such LED chips.
摘要翻译： 发光二极管芯片（1）包括GaN基辐射发射外延层序列（3），有源区（19），n掺杂层（4）和p掺杂层（5）。 p型掺杂层（5）在其主表面（9）上面向远离有源区（19）的反射接触金属化（6）提供，反射接触金属化（6）包括一个放射性接触层（15）和一个反射层（16） ）。 提供了通过薄膜技术制造这种类型的LED芯片的方法，以及包含这种LED芯片的LED组件。
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3.发明申请LIGHT-EMITTING-DIODE CHIP COMPRISING A SEQUENCE OF GaN-BASED EPITAXIAL LAYERS WHICH EMIT RADIATION AND A METHOD FOR PRODUCING THE SAME 有权发光二极管芯片，其包含发射辐射的GaN基外延层的序列及其生产方法公开(公告)号：US20110175058A1
公开(公告)日：2011-07-21
申请号：US13079235
申请日：2011-04-04
CPC分类号： H01L33/0079 , H01L24/73 , H01L33/32 , H01L33/405 , H01L33/42 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2924/01067 , H01L2924/12041 , H01L2924/00014 , H01L2924/00012
摘要： A light-emitting diode chip comprises a GaN-based, radiation-emitting epitaxial layer sequence, an active region, an n-doped layer and a p-doped layer. The p-doped layer is provided, on its main surface facing away from the active region, with a reflective contact metallization comprising a radioparent contact layer and a reflective layer. Methods for fabricating LED chips of this type by thin-film technology are provided, as are LED components containing such LED chips.
摘要翻译： 发光二极管芯片包括基于GaN的发射辐射的外延层序列，有源区，n掺杂层和p掺杂层。 在其主表面上设置p掺杂层，其背离有源区，具有包括放射性接触层和反射层的反射接触金属化。 提供了通过薄膜技术制造这种类型的LED芯片的方法，以及包含这种LED芯片的LED组件。
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4.发明授权Light-emitting-diode chip comprising a sequence of GAN-based epitaxial layers which emit radiation and a method for producing the same 有权包含发射辐射的基于GAN的外延层序列的发光二极管芯片及其制造方法公开(公告)号：US07939844B2
公开(公告)日：2011-05-10
申请号：US11755284
申请日：2007-05-30
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L24/73 , H01L33/32 , H01L33/405 , H01L33/42 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2924/01067 , H01L2924/12041 , H01L2924/00014 , H01L2924/00012
摘要： A light-emitting diode chip (1) comprises a GaN-based, radiation-emitting epitaxial layer sequence (3), an active region (19), an n-doped layer (4) and a p-doped layer (5). The p-doped layer (5) is provided, on its main surface (9) facing away from the active region (19), with a reflective contact metallization (6) comprising a radioparent contact layer (15) and a reflective layer (16). Methods for fabricating LED chips of this type by thin-film technology are provided, as are LED components containing such LED chips.
摘要翻译： 发光二极管芯片（1）包括GaN基辐射发射外延层序列（3），有源区（19），n掺杂层（4）和p掺杂层（5）。 p型掺杂层（5）在其主表面（9）上面向远离有源区（19）的反射接触金属化（6）提供，反射接触金属化（6）包括一个放射性接触层（15）和一个反射层（16） ）。 提供了通过薄膜技术制造这种类型的LED芯片的方法，以及包含这种LED芯片的LED组件。
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5.发明授权公开(公告)号：US06878563B2
公开(公告)日：2005-04-12
申请号：US10239106
申请日：2001-03-16
申请人： Stefan Bader , Berthold Hahn , Volker Härle , Hans-Jürgen Lugauer , Manfred Mundbrod-Vangerow , Dominik Eisert
发明人： Stefan Bader , Berthold Hahn , Volker Härle , Hans-Jürgen Lugauer , Manfred Mundbrod-Vangerow , Dominik Eisert
CPC分类号： H01L33/405 , H01L27/153 , H01L33/0079 , H01L33/02 , H01L33/22 , H01L33/32 , H01L33/44 , H01L33/46 , H01L2924/0002 , H01L2924/00
摘要： This invention describes a radiation-emitting semiconductor component based on GaN, whose semiconductor body is made up of a stack of different GaN semiconductor layers (1). The semiconductor body has a first principal surface (3) and a second principal surface (4), with the radiation produced being emitted through the first principal surface (3) and with a reflector (6) being produced on the second principal surface (4).The invention also describes a production method for a semiconductor component pursuant to the invention. An interlayer (9) is first applied to a substrate (8), and a plurality of GaN layers (1) that constitute the semiconductor body of the component are then applied to this. The substrate (8) and the interlayer (9) are then detached and a reflector (6) is produced on a principal surface of the semiconductor body.
摘要翻译： 本发明描述了一种基于GaN的辐射发射半导体元件，其半导体主体由不同GaN半导体层（1）的堆叠构成。 半导体本体具有第一主表面（3）和第二主表面（4），所产生的辐射通过第一主表面（3）发射，反射器（6）在第二主表面（4）上产生 ）。本发明还描述了根据本发明的半导体组件的制造方法。 首先将中间层（9）施加到基板（8），然后施加构成部件的半导体主体的多个GaN层（1）。 然后分离基板（8）和中间层（9），并且在半导体本体的主表面上产生反射器（6）。
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6.发明授权公开(公告)号：US07691659B2
公开(公告)日：2010-04-06
申请号：US11067349
申请日：2005-02-25
申请人： Stefan Bader , Berthold Hahn , Volker Härle , Hans-Jürgen Lugauer , Manfred Mundbrod-Vangerow , Dominik Eisert
发明人： Stefan Bader , Berthold Hahn , Volker Härle , Hans-Jürgen Lugauer , Manfred Mundbrod-Vangerow , Dominik Eisert
IPC分类号： H01L21/00
CPC分类号： H01L33/405 , H01L27/153 , H01L33/0079 , H01L33/02 , H01L33/22 , H01L33/32 , H01L33/44 , H01L33/46 , H01L2924/0002 , H01L2924/00
摘要： This invention describes a radiation-emitting semiconductor component based on GaN, whose semiconductor body is made up of a stack of different GaN semiconductor layers (1). The semiconductor body has a first principal surface (3) and a second principal surface (4), with the radiation produced being emitted through the first principal surface (3) and with a reflector (6) being produced on the second principal surface (4).The invention also describes a production method for a semiconductor component pursuant to the invention. An interlayer (9) is first applied to a substrate (8), and a plurality of GaN layers (1) that constitute the semiconductor body of the component are then applied to this. The substrate (8) and the interlayer (9) are then detached and a reflector (6) is produced on a principal surface of the semiconductor body.
摘要翻译： 本发明描述了一种基于GaN的辐射发射半导体元件，其半导体主体由不同GaN半导体层（1）的堆叠构成。 半导体本体具有第一主表面（3）和第二主表面（4），所产生的辐射通过第一主表面（3）发射，反射器（6）在第二主表面（4）上产生 ）。 本发明还描述了根据本发明的半导体部件的制造方法。 首先将中间层（9）施加到基板（8），然后施加构成部件的半导体主体的多个GaN层（1）。 然后分离基板（8）和中间层（9），并且在半导体本体的主表面上产生反射器（6）。
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公开(公告)号：US07319247B2
公开(公告)日：2008-01-15
申请号：US10258340
申请日：2001-03-16
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/10 , H01L33/145 , H01L33/32 , H01L33/40 , H01L33/405 , H01L33/60 , H01L33/62 , H01L2224/32245 , H01L2224/48247 , H01L2224/48472 , H01L2224/73265 , H01L2924/181 , H01L2224/48091 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： An LED chip comprising an electrically conductive and radioparent substrate, in which the epitaxial layer sequence (3) is provided on substantially the full area of its p-side (9) with a reflective, bondable p-contact layer (6). The substrate (2) is provided on its main surface (10) facing away from the epitaxial layer sequence (3) with a contact metallization (7) that covers only a portion of said main surface (10), and the decoupling of light from the chip (1) takes place via a bare region of the main surface (10) of the substrate (2) and via the chip sides (14). A further LED chip has epitaxial layers only. The p-type epitaxial layer (5) is provided on substantially the full area of the main surface (9) facing away from the n-conductive epitaxial layer (4) with a reflective, bondable p-contact layer (6), and the n-conductive epitaxial layer (4) is provided on its main surface facing away from the p-conductive epitaxial layer (5) with an n-contact layer (7) that covers only a portion of said main surface (8). The decoupling of light from the chip (1) takes place via the bare region of the main surface (8) of the n-conductive epitaxial layer (4) and via the chip sides (14).
摘要翻译： 一种LED芯片，其包括导电和无辐射基板，其中外延层序列（3）在其p侧（9）的基本上整个区域上设置有反射的，可粘合的p接触层（6）。 衬底（2）在其主表面（10）上设置为背离外延层序列（3），接触金属化（7）仅覆盖所述主表面（10）的一部分，并且光 芯片（1）经由衬底（2）的主表面（10）的裸露区域和芯片侧面（14）发生。 另外的LED芯片仅具有外延层。 p型外延层（5）通过反射型可结合的p接触层（6）设置在主表面（9）的背离n导电外延层（4）的大致整个区域上，并且 n导电外延层（4）在其主表面上设置有远离p导电外延层（5）的n-接触层（7），其仅覆盖所述主表面（8）的一部分。 来自芯片（1）的光的去耦通过n导电外延层（4）的主表面（8）的裸露区域和芯片侧（14）进行。
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8.发明授权公开(公告)号：US06849881B1
公开(公告)日：2005-02-01
申请号：US09913394
申请日：2000-11-20
申请人： Volker Harle , Berthold Hahn , Hans-Jürgen Lugauer , Helmut Bolay , Stefan Bader , Dominik Eisert , Uwe Strauss , Johannes Völkl , Ulrich Zehnder , Alfred Lell , Andreas Weimer
发明人： Volker Harle , Berthold Hahn , Hans-Jürgen Lugauer , Helmut Bolay , Stefan Bader , Dominik Eisert , Uwe Strauss , Johannes Völkl , Ulrich Zehnder , Alfred Lell , Andreas Weimer
IPC分类号： H01L33/06 , H01L33/32 , H01S5/34 , H01S5/343 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109 , H01L32/26
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06 , H01S5/3407 , H01S5/3408 , H01S5/34333
摘要： An optical semiconductor device with a multiple quantum well structure, is set out in which well layers and barrier layers, comprising various types of semiconductor layers, are alternately layered. The device well layers comprise a first composition based on a nitride semiconductor material with a first electron energy. The barrier layers comprise a second composition of a nitride semiconductor material with electron energy which is higher in comparison to the first electron energy. The well and barrier layers are in the direction of growth, by a radiation-active quatum well layer which with the essentially non-radiating well layers (6a) and the barrier layers (6b), arranged in front, form a supperlattice.
摘要翻译： 提出了具有多量子阱结构的光半导体器件，其中包括各种类型的半导体层的阱层和势垒层交替层叠。 器件阱层包括基于具有第一电子能的氮化物半导体材料的第一组合物。 阻挡层包括氮化物半导体材料的第二组合物，其电子能量与第一电子能量相比较高。 井和阻挡层沿生长方向通过辐射活性层的井层，其中布置在前面的基本上不辐射的阱层（6a）和阻挡层（6b）形成超晶格。
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9.发明授权公开(公告)号：US07642565B2
公开(公告)日：2010-01-05
申请号：US10439084
申请日：2003-05-15
申请人： Stefan Bader , Berthold Hahn , Volker Härle , Hans-Jürgen Lugauer
发明人： Stefan Bader , Berthold Hahn , Volker Härle , Hans-Jürgen Lugauer
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/007 , H01L33/325 , H01S5/021 , H01S5/3054 , H01S5/34333
摘要： A radiation-emitting semiconductor component has a high p-type conductivity. The semiconductor body of the component includes a substrate, preferably an SiC-based substrate, on which a plurality of GaN-based layers have been formed. The active region of these layers is arranged between at least one n-conducting layer and a p-conducting layer. The p-conducting layer is grown in tensile-stressed form. The p-doping that is used is preferably Mg.
摘要翻译： 辐射发射半导体组件具有高p型电导率。 元件的半导体主体包括其上形成有多个GaN基层的衬底，优选为SiC基衬底。 这些层的有源区域被布置在至少一个n导电层和p导电层之间。 p导电层以拉伸应力形式生长。 使用的p掺杂优选为Mg。
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10.发明授权Method for fabricating a radiation-emitting semiconductor chip based on III-V nitride semiconductor 有权用于制造基于III-V族氮化物半导体的辐射发射半导体芯片的方法公开(公告)号：US07105370B2
公开(公告)日：2006-09-12
申请号：US11017615
申请日：2004-12-20
IPC分类号： H01L21/00
CPC分类号： B82Y20/00 , H01L33/007 , H01L33/0075 , H01L33/0079 , H01S5/34333
摘要： A method for fabricating a radiation-emitting semiconductor chip having a thin-film element based on III–V nitride semiconductor material includes the steps of depositing a layer sequence of a thin-film element on an epitaxy substrate. The thin-film element is joined to a carrier, and the epitaxy substrate is removed from the thin-film element. The epitaxy substrate has a substrate body made from PolySiC or PolyGaN or from SiC, GaN or sapphire, which is joined to a grown-on layer by a bonding layer, and on which the layer sequence of the thin-film element is deposited by epitaxy.
摘要翻译： 一种制造具有基于III-V族氮化物半导体材料的薄膜元件的辐射发射半导体芯片的方法包括以下步骤：在外延衬底上沉积薄膜元件层序列。 将薄膜元件接合到载体上，并且将外延基板从薄膜元件移除。 外延衬底具有由PolySiC或PolyGaN制成的衬底主体或由SiC，GaN或蓝宝石构成的衬底主体，其通过结合层与生长层接合，并且薄膜元件的层序列通过外延沉积 。
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