Invention Grant
- Patent Title: Method of manufacturing field emission device
- Patent Title (中): 场致发射装置的制造方法
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Application No.: US11790657Application Date: 2007-04-26
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Publication No.: US07942714B2Publication Date: 2011-05-17
- Inventor: Ho-Suk Kang , Yong-Wan Jin , Sun-Il Kim , Deuk-Seok Chung , Byong-Gwon Song , Shang-Hyeun Park
- Applicant: Ho-Suk Kang , Yong-Wan Jin , Sun-Il Kim , Deuk-Seok Chung , Byong-Gwon Song , Shang-Hyeun Park
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Cantor Colburn LLP
- Priority: KR10-2006-0108836 20061106
- Main IPC: H01J9/02
- IPC: H01J9/02 ; H01J1/304

Abstract:
A method of manufacturing a field emission display includes: sequentially forming a cathode electrode, an insulating layer, and a gate material layer on a substrate; forming a metal sacrificial layer on an upper surface of the gate material layer; forming a through hole to expose the insulating layer in the metal sacrificial layer and the gate material layer; forming an emitter hole to expose the cathode electrode in the insulating layer exposed through the through hole; forming a gate electrode by etching the gate material layer constituting an upper wall of the emitter hole; and forming an emitter of Carbon NanoTubes (CNTs) on an upper surface of the cathode electrode located below the through hole.
Public/Granted literature
- US20080108271A1 Method of manufacturing field emission device Public/Granted day:2008-05-08
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