公开(公告)号：US07942714B2

公开(公告)日：2011-05-17

申请号：US11790657

申请日：2007-04-26

申请人： Ho-Suk Kang ,  Yong-Wan Jin ,  Sun-Il Kim ,  Deuk-Seok Chung ,  Byong-Gwon Song ,  Shang-Hyeun Park

发明人： Ho-Suk Kang ,  Yong-Wan Jin ,  Sun-Il Kim ,  Deuk-Seok Chung ,  Byong-Gwon Song ,  Shang-Hyeun Park

IPC分类号： H01J9/02 ,  H01J1/304

CPC分类号： H01J63/02 ,  H01J9/025 ,  H01J2201/30469 ,  H01J2329/0455

摘要： A method of manufacturing a field emission display includes: sequentially forming a cathode electrode, an insulating layer, and a gate material layer on a substrate; forming a metal sacrificial layer on an upper surface of the gate material layer; forming a through hole to expose the insulating layer in the metal sacrificial layer and the gate material layer; forming an emitter hole to expose the cathode electrode in the insulating layer exposed through the through hole; forming a gate electrode by etching the gate material layer constituting an upper wall of the emitter hole; and forming an emitter of Carbon NanoTubes (CNTs) on an upper surface of the cathode electrode located below the through hole.

摘要翻译： 场发射显示器的制造方法包括：在基板上依次形成阴极电极，绝缘层和栅极材料层; 在栅极材料层的上表面上形成金属牺牲层; 形成通孔以暴露金属牺牲层和栅极材料层中的绝缘层; 形成发射极孔，露出通过该通孔的绝缘层中的阴极电极; 通过蚀刻构成发射极孔的上壁的栅极材料层来形成栅电极; 以及在位于通孔下方的阴极电极的上表面上形成碳纳米管（CNT）的发射极。

公开(公告)号：US20080108271A1

公开(公告)日：2008-05-08

申请号：US11790657

申请日：2007-04-26

申请人： Ho-Suk Kang ,  Yong-Wan Jin ,  Sun-Il Kim ,  Deuk-Seok Chung ,  Byong-Gwon Song ,  Shang-Hyeun Park

发明人： Ho-Suk Kang ,  Yong-Wan Jin ,  Sun-Il Kim ,  Deuk-Seok Chung ,  Byong-Gwon Song ,  Shang-Hyeun Park

IPC分类号： H01J9/02

CPC分类号： H01J63/02 ,  H01J9/025 ,  H01J2201/30469 ,  H01J2329/0455

摘要： A method of manufacturing a field emission display includes: sequentially forming a cathode electrode, an insulating layer, and a gate material layer on a substrate; forming a metal sacrificial layer on an upper surface of the gate material layer; forming a through hole to expose the insulating layer in the metal sacrificial layer and the gate material layer; forming an emitter hole to expose the cathode electrode in the insulating layer exposed through the through hole; forming a gate electrode by etching the gate material layer constituting an upper wall of the emitter hole; and forming an emitter of Carbon NanoTubes (CNTs) on an upper surface of the cathode electrode located below the through hole.

摘要翻译： 场发射显示器的制造方法包括：在基板上依次形成阴极电极，绝缘层和栅极材料层; 在栅极材料层的上表面上形成金属牺牲层; 形成通孔以暴露金属牺牲层和栅极材料层中的绝缘层; 形成发射极孔，露出通过该通孔的绝缘层中的阴极电极; 通过蚀刻构成发射极孔的上壁的栅极材料层来形成栅电极; 以及在位于通孔下方的阴极电极的上表面上形成碳纳米管（CNT）的发射极。

公开(公告)号：US20070164653A1

公开(公告)日：2007-07-19

申请号：US11509622

申请日：2006-08-25

申请人： Byong-Gwon Song ,  Shang-Hyeun Park ,  Yong-Wan Jin ,  Sun-Il Kim ,  Tae-Won Jeong

发明人： Byong-Gwon Song ,  Shang-Hyeun Park ,  Yong-Wan Jin ,  Sun-Il Kim ,  Tae-Won Jeong

IPC分类号： H01J63/04 ,  H01J1/62 ,  B05D5/12

CPC分类号： H01J63/06 ,  B82Y10/00 ,  H01J2201/30469

摘要： A method of manufacturing an upper panel of a field emission type backlight unit. The method includes: sequentially forming an anode electrode and a phosphor layer on a substrate; forming a metal reflection film on the phosphor layer; and annealing a surface of the metal reflection film. The method can increase brightness of an image, can prevent occurrence of an electric arc when a high driving voltage is applied to the backlight unit, and allows removal of residues produced when manufacturing the backlight unit.

摘要翻译： 一种制造场致发射型背光单元的上面板的方法。 该方法包括：在基板上依次形成阳极电极和荧光体层; 在荧光体层上形成金属反射膜; 并退火金属反射膜的表面。 该方法可以增加图像的亮度，当向背光单元施加高驱动电压时可以防止发生电弧，并且允许去除制造背光单元时产生的残留物。

公开(公告)号：US20080007171A1

公开(公告)日：2008-01-10

申请号：US11730720

申请日：2007-04-03

申请人： Tae-Won Jeong ,  Shang-Hyeun Park ,  Jeong-Na Heo ,  Jeong-Hee Lee ,  Jong-Min Kim ,  Jin-Pyo Hong ,  Yong-Wan Jin ,  Byong-Gwon Song

发明人： Tae-Won Jeong ,  Shang-Hyeun Park ,  Jeong-Na Heo ,  Jeong-Hee Lee ,  Jong-Min Kim ,  Jin-Pyo Hong ,  Yong-Wan Jin ,  Byong-Gwon Song

IPC分类号： H01J63/04

CPC分类号： H05B33/10 ,  H05B33/24 ,  H05B33/26 ,  H05B33/28

摘要： An electroluminescent device uses nano structures having a wide surface area. The electroluminescent device includes a substrate, a first electrode having a plurality of nano structures formed on an upper surface of the substrate, a dielectric layer formed so as to correspond to the shape of the nano structures, a light emitting layer formed so as to correspond to the shape of the dielectric layer, and a second electrode covering the light emitting layer. A surface of the second electrode facing the light emitting layer is separated by a predetermined distance from a surface of the nano structures.

摘要翻译： 电致发光器件使用具有宽表面积的纳米结构。 电致发光器件包括衬底，具有形成在衬底的上表面上的多个纳米结构的第一电极，形成为对应于纳米结构的形状的电介质层，形成为对应于发光层的发光层 到电介质层的形状，以及覆盖发光层的第二电极。 面向发光层的第二电极的表面与纳米结构的表面隔开预定的距离。

公开(公告)号：US07714496B2

公开(公告)日：2010-05-11

申请号：US11655153

申请日：2007-01-19

申请人： Kyong-Won Min ,  Byong-Gwon Song ,  Yong-Wan Jin ,  Deuk-Seok Chung ,  Moon-Jin Shin

发明人： Kyong-Won Min ,  Byong-Gwon Song ,  Yong-Wan Jin ,  Deuk-Seok Chung ,  Moon-Jin Shin

IPC分类号： H01J1/62

CPC分类号： H01J9/385 ,  H01J31/127 ,  H01J2329/941

摘要： A field emission display device and a field emission type backlight device having a sealing structure for a vacuum exhaust are provided. The field emission display device is constructed with a cathode substrate and an anode substrate attached to each other and facing each other and a vacuum-exhausted panel space formed therebetween to generated a visual image. Also, the field emission display device is constructed with a sealing member disposed along edges of the cathode substrate and the anode substrate to seal the panel space. At least one inlet exposed to the panel space and an exhaust passage through which the inlet communicates with an outside of the field emission display device are formed in the sealing member. The field emission display device and the field emission type backlight device according to the present invention has a reduced number of manufacturing processes and is suitable for a compact, slim and lightweight design, and a large screen by having the sealing structure for the vacuum exhaust.

摘要翻译： 提供了一种具有真空排气密封结构的场发射显示装置和场发射型背光装置。 场致发射显示装置由阴极基板和阳极基板构成，彼此相邻并且彼此面对，并且在其间形成真空排空的面板空间以产生视觉图像。 此外，场致发射显示装置构造有沿着阴极基板和阳极基板的边缘设置的密封构件，以密封面板空间。 在密封构件中形成有至少一个暴露于面板空间的入口和入口与场致发射显示装置的外部连通的排气通道。 根据本发明的场致发射显示装置和场发射型背光装置的制造工艺数量减少，并且适合于紧凑，纤薄和轻便的设计，并且通过具有用于真空排气的密封结构的大屏幕。

公开(公告)号：US20070228928A1

公开(公告)日：2007-10-04

申请号：US11655153

申请日：2007-01-19

申请人： Kyong-Won Min ,  Byong-Gwon Song ,  Yong-Wan Jin ,  Deuk-Seok Chung ,  Moon-Jin Shin

发明人： Kyong-Won Min ,  Byong-Gwon Song ,  Yong-Wan Jin ,  Deuk-Seok Chung ,  Moon-Jin Shin

IPC分类号： H01J1/62

CPC分类号： H01J9/385 ,  H01J31/127 ,  H01J2329/941

摘要： A field emission display device and a field emission type backlight device having a sealing structure for a vacuum exhaust are provided. The field emission display device is constructed with a cathode substrate and an anode substrate attached to each other and facing each other and a vacuum-exhausted panel space formed therebetween to generated a visual image. Also, the field emission display device is constructed with a sealing member disposed along edges of the cathode substrate and the anode substrate to seal the panel space. At least one inlet exposed to the panel space and an exhaust passage through which the inlet communicates with an outside of the field emission display device are formed in the sealing member. The field emission display device and the field emission type backlight device according to the present invention has a reduced number of manufacturing processes and is suitable for a compact, slim and lightweight design, and a large screen by having the sealing structure for the vacuum exhaust.

摘要翻译： 提供了一种具有真空排气密封结构的场发射显示装置和场发射型背光装置。 场致发射显示装置由阴极基板和阳极基板构成，彼此相邻并且彼此面对，并且在其间形成真空排空的面板空间以产生视觉图像。 此外，场致发射显示装置构造有沿着阴极基板和阳极基板的边缘设置的密封构件，以密封面板空间。 在密封构件中形成有至少一个暴露于面板空间的入口和入口与场致发射显示装置的外部连通的排气通道。 根据本发明的场致发射显示装置和场发射型背光装置的制造工艺数量减少，并且适合于紧凑，纤薄和轻便的设计，并且通过具有用于真空排气的密封结构的大屏幕。

公开(公告)号：US20070138525A1

公开(公告)日：2007-06-21

申请号：US11606966

申请日：2006-12-01

申请人： Jae-Eun Jang ,  Seung-Nam Cha ,  Byong-Gwon Song ,  Yong-Wan Jin

发明人： Jae-Eun Jang ,  Seung-Nam Cha ,  Byong-Gwon Song ,  Yong-Wan Jin

IPC分类号： H01L29/94 ,  H01L27/108 ,  H01L29/76 ,  H01L31/119

CPC分类号： G11C13/025 ,  B82Y10/00 ,  G11C23/00 ,  H01L27/10805 ,  H01L27/1203 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/86 ,  Y10S977/724 ,  Y10S977/725

摘要： A memory device that performs writing and reading operations using a mechanical movement of a nanowire, and a method of manufacturing the memory device are provided. The memory device includes a source electrode, a drain electrode, and a gate electrode, each of which is formed on an insulating substrate. A nanowire capacitor is formed on the source electrode. The nanowire capacitor includes a first nanowire vertically grown from the source electrode, a dielectric layer formed on the outer surface of the first nanowire, and a floating electrode formed on the outer surface of the dielectric layer. A second nanowire is vertically grown on the drain electrode. The drain electrode is arranged between the source electrode and the gate electrode. The second nanowire is elastically deformed and contacts the nanowire capacitor when a drain voltage is applied to the drain electrode, and polarity of the drain voltage is opposite to polarity of a source voltage that is applied to the source electrode. Information is stored in the memory device in a form of a charged or non-charged state of the nanowire capacitor. Reading and writing operation of the memory device is performed by the mechanical movement of the second nanowire.

摘要翻译： 提供了使用纳米线的机械移动执行写入和读取操作的存储器件，以及制造存储器件的方法。 存储器件包括源电极，漏电极和栅电极，它们都形成在绝缘衬底上。 在源电极上形成纳米线电容器。 纳米线电容器包括从源极垂直生长的第一纳米线，形成在第一纳米线的外表面上的电介质层和形成在电介质层的外表面上的浮动电极。 在漏电极上垂直生长第二纳米线。 漏极布置在源电极和栅电极之间。 当向漏电极施加漏极电压时，第二纳米线弹性变形并与纳米线电容器接触，并且漏极电压的极性与施加到源电极的源极电压的极性相反。 信息以纳米线电容器的充电或非充电状态的形式存储在存储器件中。 通过第二纳米线的机械运动来进行记忆装置的读写操作。

公开(公告)号：US08064249B2

公开(公告)日：2011-11-22

申请号：US11889515

申请日：2007-08-14

申请人： Jae-Eun Jang ,  Seung-Nam Cha ,  Byong-Gwon Song ,  Yong-Wan Jin

发明人： Jae-Eun Jang ,  Seung-Nam Cha ,  Byong-Gwon Song ,  Yong-Wan Jin

IPC分类号： G11C11/50

CPC分类号： G11C13/025 ,  B82Y10/00 ,  G11C23/00 ,  H01L51/0048 ,  Y10S977/943

摘要： A nanowire electromechanical switching device is constructed with a source electrode and a drain electrode disposed on an insulating substrate and spaced apart from each other, a first nanowire vertically grown on the source electrode and to which a V1 voltage is applied, a second nanowire vertically grown on the drain electrode and to which a V2 voltage having an opposite polarity to that of the V1 voltage is applied, and a gate electrode spaced apart from the second nanowire, partially surrounding the second nanowire and having an opening that faces the first nanowire in order to avoid disturbing a mutual switching operation of the first nanowire and the second nanowire and to which a V3 voltage having the same polarity as that of the V2 voltage is applied.

摘要翻译： 纳米线机电开关器件由源电极和漏电极构成，绝缘基片设置在绝缘基片上并彼此间隔开，第一纳米线在源电极上垂直生长并施加V1电压，第二纳米线垂直生长 并且施加具有与V1电压相反的极性的V2电压的栅极电极和与第二纳米线间隔开的栅电极，部分地围绕第二纳米线并且具有面向第一纳米线的开口 以避免干扰第一纳米线和第二纳米线的相互切换操作，并且施加具有与V2电压相同极性的V3电压。

公开(公告)号：US07719111B2

公开(公告)日：2010-05-18

申请号：US11408054

申请日：2006-04-21

申请人： Jae-Eun Jang ,  Seung-Nam Cha ,  Yong-Wan Jin ,  Byong-Gwon Song

发明人： Jae-Eun Jang ,  Seung-Nam Cha ,  Yong-Wan Jin ,  Byong-Gwon Song

IPC分类号： H01L21/28

CPC分类号： B81C1/00111 ,  B81B3/0086 ,  B81B2201/018 ,  H01H1/0094 ,  Y10S977/762 ,  Y10T29/49105

摘要： A nanowire electronmechanical device with an improved structure and a method of fabricating the same prevent burning of two nanowires which are switched due to contact with each other while providing stable on-off switching characteristics. The nanowire electromechanical device comprises: an insulating substrate; first and third electrodes spaced apart from each other on the insulating substrate, wherein a negative voltage and a positive voltage, varying within a predetermined range, are applied to the first and third electrodes, respectively; a second electrode interposed between the first and third electrodes, a constant positive voltage, lower than the voltage applied to the third electrode, being applied to the second electrode; a first nanowire vertically grown on the first electrode and charged with a negative charge; a second nanowire vertically grown on the second electrode and charged with a positive charge; and a third nanowire vertically grown on the third electrode and charged with an amount of positive charge corresponding to the magnitude of the varying voltage applied to the third electrode.

摘要翻译： 具有改进结构的纳米线电子机械装置及其制造方法防止由于彼此接触而切换的两个纳米线的燃烧，同时提供稳定的开 - 关开关特性。 纳米线机电装置包括：绝缘基板; 在绝缘基板上彼此间隔开的第一和第三电极，其中在预定范围内变化的负电压和正电压分别施加到第一和第三电极; 插入在第一和第三电极之间的第二电极，施加到第二电极的恒定的正电压低于施加到第三电极的电压; 在第一电极上垂直生长并带有负电荷的第一纳米线; 在第二电极上垂直生长并带有正电荷的第二纳米线; 以及在第三电极上垂直生长的第三纳米线，并充有与施加到第三电极的变化电压的幅度相对应的一定量的正电荷。

公开(公告)号：US07564085B2

公开(公告)日：2009-07-21

申请号：US11606966

申请日：2006-12-01

申请人： Jae-Eun Jang ,  Seung-Nam Cha ,  Byong-Gwon Song ,  Yong-Wan Jin

发明人： Jae-Eun Jang ,  Seung-Nam Cha ,  Byong-Gwon Song ,  Yong-Wan Jin

IPC分类号： H01L27/108 ,  H01L29/08

CPC分类号： G11C13/025 ,  B82Y10/00 ,  G11C23/00 ,  H01L27/10805 ,  H01L27/1203 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/86 ,  Y10S977/724 ,  Y10S977/725

摘要： A memory device that performs writing and reading operations using a mechanical movement of a nanowire, and a method of manufacturing the memory device are provided. The memory device includes a source electrode, a drain electrode, and a gate electrode, each of which is formed on an insulating substrate. A nanowire capacitor is formed on the source electrode. The nanowire capacitor includes a first nanowire vertically grown from the source electrode, a dielectric layer formed on the outer surface of the first nanowire, and a floating electrode formed on the outer surface of the dielectric layer. A second nanowire is vertically grown on the drain electrode. The drain electrode is arranged between the source electrode and the gate electrode. The second nanowire is elastically deformed and contacts the nanowire capacitor when a drain voltage is applied to the drain electrode, and polarity of the drain voltage is opposite to polarity of a source voltage that is applied to the source electrode. Information is stored in the memory device in a form of a charged or non-charged state of the nanowire capacitor. Reading and writing operation of the memory device is performed by the mechanical movement of the second nanowire.

摘要翻译： 提供了使用纳米线的机械移动执行写入和读取操作的存储器件，以及制造存储器件的方法。 存储器件包括源电极，漏电极和栅电极，它们都形成在绝缘衬底上。 在源电极上形成纳米线电容器。 纳米线电容器包括从源极垂直生长的第一纳米线，形成在第一纳米线的外表面上的电介质层和形成在电介质层的外表面上的浮动电极。 在漏电极上垂直生长第二纳米线。 漏极布置在源电极和栅电极之间。 当向漏电极施加漏极电压时，第二纳米线弹性变形并与纳米线电容器接触，并且漏极电压的极性与施加到源电极的源极电压的极性相反。 信息以纳米线电容器的充电或非充电状态的形式存储在存储器件中。 通过第二纳米线的机械运动来进行记忆装置的读写操作。