发明授权
- 专利标题： High-K metal gate CMOS
- 专利标题（中）： 高K金属门CMOS
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申请号： US12426457申请日： 2009-04-20
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公开(公告)号： US07943460B2公开(公告)日： 2011-05-17
- 发明人: Renee T. Mo , Huiming Bu , Michael P. Chudzik , William K. Henson , Mukesh V. Khare , Vijay Narayanan
- 申请人： Renee T. Mo , Huiming Bu , Michael P. Chudzik , William K. Henson , Mukesh V. Khare , Vijay Narayanan
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 H. Daniel Schnurmann
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238
摘要：
A method of forming a semiconductor device is provided that includes forming a Ge-containing layer atop a p-type device regions of the substrate. Thereafter, a first dielectric layer is formed in a second portion of a substrate, and a second dielectric layer is formed overlying the first dielectric layer in the second portion of the substrate and overlying a first portion of the substrate. Gate structures may then formed atop the p-type device regions and n-type device regions of the substrate, in which the gate structures to the n-type device regions include a rare earth metal.
公开/授权文献
- US20100264495A1 High-K Metal Gate CMOS 公开/授权日：2010-10-21
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