发明授权
- 专利标题： Process for manufacturing a semiconductor device comprising a metal-compound film
- 专利标题（中）： 制造包含金属化合物膜的半导体器件的方法
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申请号： US11324536申请日： 2006-01-04
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公开(公告)号： US07943475B2公开(公告)日： 2011-05-17
- 发明人: Tomoe Yamamoto , Toshihiro Iizuka
- 申请人： Tomoe Yamamoto , Toshihiro Iizuka
- 申请人地址： JP Kanagawa
- 专利权人： Renesas Electronics Corporation
- 当前专利权人： Renesas Electronics Corporation
- 当前专利权人地址： JP Kanagawa
- 代理机构： Young & Thompson
- 优先权： JP2003-084314 20030326
- 主分类号： H01L27/108
- IPC分类号： H01L27/108 ; H01L21/8242
摘要：
There is provided a semiconductor device comprising a dielectric film made of a high dielectric constant material, in which a leak current is reduced in the film and which exhibits improved device reliability. Specifically, a dielectric film 142 is a metal-compound film having a composition represented by the formula MOxCyNz wherein x, y and z meet the conditions: 0
公开/授权文献
- US20060121671A1 Semiconductor device and manufacturing process therefor 公开/授权日：2006-06-08
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