发明授权
- 专利标题： Methods of titanium deposition
- 专利标题（中）： 钛沉积方法
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申请号： US12720562申请日： 2010-03-09
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公开(公告)号： US07947597B2公开(公告)日： 2011-05-24
- 发明人: Joel A. Drewes , Cem Basceri , Demetrius Sarigiannis
- 申请人： Joel A. Drewes , Cem Basceri , Demetrius Sarigiannis
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Wells St. John P.S.
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763
摘要：
Some embodiments include methods of titanium deposition in which a silicon-containing surface and an electrically insulative surface are both exposed to titanium-containing material, and in which such exposure forms titanium silicide from the silicon-containing surface while not depositing titanium onto the electrically insulative surface. The embodiments may include atomic layer deposition processes, and may include a hydrogen pre-treatment of the silicon-containing surfaces to activate the surfaces for reaction with the titanium-containing material. Some embodiments include methods of titanium deposition in which a semiconductor material surface and an electrically insulative surface are both exposed to titanium-containing material, and in which a titanium-containing film is uniformly deposited across both surfaces.
公开/授权文献
- US20100167542A1 Methods of Titanium Deposition 公开/授权日：2010-07-01
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