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公开(公告)号：US20100167542A1
公开(公告)日：2010-07-01
申请号：US12720562
申请日：2010-03-09
IPC分类号： H01L21/3205
CPC分类号： H01L21/28562 , C23C16/06 , C23C16/45525 , H01L21/28518 , H01L21/76843 , Y10S438/913
摘要： Some embodiments include methods of titanium deposition in which a silicon-containing surface and an electrically insulative surface are both exposed to titanium-containing material, and in which such exposure forms titanium silicide from the silicon-containing surface while not depositing titanium onto the electrically insulative surface. The embodiments may include atomic layer deposition processes, and may include a hydrogen pre-treatment of the silicon-containing surfaces to activate the surfaces for reaction with the titanium-containing material. Some embodiments include methods of titanium deposition in which a semiconductor material surface and an electrically insulative surface are both exposed to titanium-containing material, and in which a titanium-containing film is uniformly deposited across both surfaces.
摘要翻译： 一些实施例包括钛沉积的方法，其中含硅表面和电绝缘表面都暴露于含钛材料，并且其中这种暴露从含硅表面形成硅化钛，而不将钛沉积在电绝缘 表面。 这些实施方案可以包括原子层沉积工艺，并且可以包括含氢表面的氢预处理以活化表面以与含钛材料反应。 一些实施例包括钛沉积的方法，其中半导体材料表面和电绝缘表面都暴露于含钛材料，并且其中含钛膜均匀地沉积在两个表面上。
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公开(公告)号：US07947597B2
公开(公告)日：2011-05-24
申请号：US12720562
申请日：2010-03-09
IPC分类号： H01L21/4763
CPC分类号： H01L21/28562 , C23C16/06 , C23C16/45525 , H01L21/28518 , H01L21/76843 , Y10S438/913
摘要： Some embodiments include methods of titanium deposition in which a silicon-containing surface and an electrically insulative surface are both exposed to titanium-containing material, and in which such exposure forms titanium silicide from the silicon-containing surface while not depositing titanium onto the electrically insulative surface. The embodiments may include atomic layer deposition processes, and may include a hydrogen pre-treatment of the silicon-containing surfaces to activate the surfaces for reaction with the titanium-containing material. Some embodiments include methods of titanium deposition in which a semiconductor material surface and an electrically insulative surface are both exposed to titanium-containing material, and in which a titanium-containing film is uniformly deposited across both surfaces.
摘要翻译： 一些实施例包括钛沉积的方法，其中含硅表面和电绝缘表面都暴露于含钛材料，并且其中这种暴露从含硅表面形成硅化钛，而不将钛沉积在电绝缘 表面。 这些实施方案可以包括原子层沉积工艺，并且可以包括含氢表面的氢预处理以活化表面以与含钛材料反应。 一些实施例包括钛沉积的方法，其中半导体材料表面和电绝缘表面都暴露于含钛材料，并且其中含钛膜均匀地沉积在两个表面上。
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公开(公告)号：US07700480B2
公开(公告)日：2010-04-20
申请号：US11741113
申请日：2007-04-27
IPC分类号： H01L21/4763
CPC分类号： H01L21/28562 , C23C16/06 , C23C16/45525 , H01L21/28518 , H01L21/76843 , Y10S438/913
摘要： Some embodiments include methods of titanium deposition in which a silicon-containing surface and an electrically insulative surface are both exposed to titanium-containing material, and in which such exposure forms titanium silicide from the silicon-containing surface while not depositing titanium onto the electrically insulative surface. The embodiments may include atomic layer deposition processes, and may include a hydrogen pre-treatment of the silicon-containing surfaces to activate the surfaces for reaction with the titanium-containing material. Some embodiments include methods of titanium deposition in which a semiconductor material surface and an electrically insulative surface are both exposed to titanium-containing material, and in which a titanium-containing film is uniformly deposited across both surfaces.
摘要翻译： 一些实施例包括钛沉积的方法，其中含硅表面和电绝缘表面都暴露于含钛材料，并且其中这种暴露从含硅表面形成硅化钛，而不将钛沉积到电绝缘 表面。 这些实施方案可以包括原子层沉积工艺，并且可以包括含氢表面的氢预处理以活化表面以与含钛材料反应。 一些实施例包括钛沉积的方法，其中半导体材料表面和电绝缘表面都暴露于含钛材料，并且其中含钛膜均匀地沉积在两个表面上。
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公开(公告)号：US20080268633A1
公开(公告)日：2008-10-30
申请号：US11741113
申请日：2007-04-27
IPC分类号： H01L21/4763
CPC分类号： H01L21/28562 , C23C16/06 , C23C16/45525 , H01L21/28518 , H01L21/76843 , Y10S438/913
摘要： Some embodiments include methods of titanium deposition in which a silicon-containing surface and an electrically insulative surface are both exposed to titanium-containing material, and in which such exposure forms titanium suicide from the silicon-containing surface while not depositing titanium onto the electrically insulative surface. The embodiments may include atomic layer deposition processes, and may include a hydrogen pre-treatment of the silicon-containing surfaces to activate the surfaces for reaction with the titanium-containing material. Some embodiments include methods of titanium deposition in which a semiconductor material surface and an electrically insulative surface are both exposed to titanium-containing material, and in which a titanium-containing film is uniformly deposited across both surfaces.
摘要翻译： 一些实施例包括钛沉积的方法，其中含硅表面和电绝缘表面都暴露于含钛材料，并且其中这种暴露从含硅表面形成硅化钛，而不将钛沉积在电绝缘 表面。 这些实施方案可以包括原子层沉积工艺，并且可以包括含氢表面的氢预处理以活化表面以与含钛材料反应。 一些实施例包括钛沉积的方法，其中半导体材料表面和电绝缘表面都暴露于含钛材料，并且其中含钛膜均匀地沉积在两个表面上。
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公开(公告)号：US20060216933A1
公开(公告)日：2006-09-28
申请号：US11413431
申请日：2006-04-28
IPC分类号： H01L21/44
CPC分类号： C23C18/1283 , C23C18/1208 , C23C18/122 , C23C18/1245 , C23C18/125 , H01L21/02164 , H01L21/02282 , H01L21/283 , H01L21/28556 , H01L21/31 , H01L21/316 , H01L21/31612 , H01L21/318
摘要： The invention includes methods of forming films over substrates. A substrate is provided within a reaction chamber, and a mixture is also provided within the chamber. The mixture comprises a precursor of a desired material within a supercritical fluid. The precursor is relatively reactive under one set of conditions and is relatively non-reactive under another set of conditions. The precursor and supercritical fluid mixture is initially provided in the chamber under the conditions at which the precursor is relatively non-reactive. Subsequently, and while maintaining the supercritical state of the supercritical fluid, the conditions within the reaction chamber are changed to the conditions under which the precursor is relatively reactive. The precursor reacts to form the desired material, and at least some of the desired material forms a film on the substrate.
摘要翻译： 本发明包括在基底上形成膜的方法。 在反应室内设置基板，并且还在室内设置混合物。 该混合物包含超临界流体中期望材料的前体。 前体在一组条件下是相对反应的，并且在另一组条件下相对不反应。 初始和超临界流体混合物最初在前体相对不反应的条件下在室中提供。 随后，在保持超临界流体的超临界状态的同时，将反应室内的条件变更为前体相对反应的条件。 前体反应形成所需的材料，并且所需材料中的至少一些在基材上形成膜。
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公开(公告)号：US20060205228A1
公开(公告)日：2006-09-14
申请号：US11414407
申请日：2006-04-28
申请人： Demetrius Sarigiannis , Garo Derderian , Cem Basceri , Gurtej Sandhu , F. Gealy , Chris Carlson
发明人： Demetrius Sarigiannis , Garo Derderian , Cem Basceri , Gurtej Sandhu , F. Gealy , Chris Carlson
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/32051 , C23C16/4404 , C23C16/4405 , C23C16/45531 , C23C16/45534 , H01L21/02178 , H01L21/02186 , H01L21/0228 , H01L21/28562 , H01L21/3141 , H01L21/31616
摘要： The invention includes an atomic layer deposition method of forming a layer of a deposited composition on a substrate. The method includes positioning a semiconductor substrate within an atomic layer deposition chamber. On the substrate, an intermediate composition monolayer is formed, followed by a desired deposited composition from reaction with the intermediate composition, collectively from flowing multiple different composition deposition precursors to the substrate within the deposition chamber. A material adheres to a chamber internal component surface from such sequentially forming. After such sequentially forming, a reactive gas flows to the chamber which is different in composition from the multiple different deposition precursors and which is effective to react with such adhering material. After the reactive gas flowing, such sequentially forming is repeated. Further implementations are contemplated.
摘要翻译： 本发明包括在基板上形成沉积的组合物层的原子层沉积方法。 该方法包括将半导体衬底定位在原子层沉积室内。 在基材上形成中间组合物单层，随后是与中间体组合物反应所需的沉积组合物，统称为将多种不同的组合物沉积前体流到沉积室内的基底。 材料粘附到室内部件表面，从而依次形成。 在这种顺序形成之后，反应性气体流入到与多种不同的沉积前体不同的组合物中，并有效地与这种粘附材料反应。 在反应气体流动之后，重复这种顺序形成。 考虑进一步的实现。
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公开(公告)号：US20060205227A1
公开(公告)日：2006-09-14
申请号：US11413438
申请日：2006-04-28
申请人： Demetrius Sarigiannis , Garo Derderian , Cem Basceri , Gurtej Sandhu , F. Gealy , Chris Carlson
发明人： Demetrius Sarigiannis , Garo Derderian , Cem Basceri , Gurtej Sandhu , F. Gealy , Chris Carlson
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/32051 , C23C16/4404 , C23C16/4405 , C23C16/45531 , C23C16/45534 , H01L21/02178 , H01L21/02186 , H01L21/0228 , H01L21/28562 , H01L21/3141 , H01L21/31616
摘要： The invention includes an atomic layer deposition method of forming a layer of a deposited composition on a substrate. The method includes positioning a semiconductor substrate within an atomic layer deposition chamber. On the substrate, an intermediate composition monolayer is formed, followed by a desired deposited composition from reaction with the intermediate composition, collectively from flowing multiple different composition deposition precursors to the substrate within the deposition chamber. A material adheres to a chamber internal component surface from such sequentially forming. After such sequentially forming, a reactive gas flows to the chamber which is different in composition from the multiple different deposition precursors and which is effective to react with such adhering material. After the reactive gas flowing, such sequentially forming is repeated. Further implementations are contemplated.
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公开(公告)号：US07056806B2
公开(公告)日：2006-06-06
申请号：US10665099
申请日：2003-09-17
申请人： Cem Basceri , Trung T. Doan , Ronald A. Weimer , Kevin L. Beaman , Lyle D. Breiner , Lingyi A. Zheng , Er-Xuan Ping , Demetrius Sarigiannis , David J. Kubista
发明人： Cem Basceri , Trung T. Doan , Ronald A. Weimer , Kevin L. Beaman , Lyle D. Breiner , Lingyi A. Zheng , Er-Xuan Ping , Demetrius Sarigiannis , David J. Kubista
IPC分类号： H01L21/76 , H01L21/20 , H01L21/36 , H01L21/04 , H01L21/261
CPC分类号： C23C16/45527 , C23C16/34 , C23C16/45546
摘要： The present disclosure provides methods and apparatus useful in depositing materials on batches of microfeature workpieces. One implementation provides a method in which a quantity of a first precursor gas is introduced to an enclosure at a first enclosure pressure. The pressure within the enclosure is reduced to a second enclosure pressure while introducing a purge gas at a first flow rate. The second enclosure pressure may approach or be equal to a steady-state base pressure of the processing system at the first flow rate. After reducing the pressure, the purge gas flow may be increased to a second flow rate and the enclosure pressure may be increased to a third enclosure pressure. Thereafter, a flow of a second precursor gas may be introduced with a pressure within the enclosure at a fourth enclosure pressure; the third enclosure pressure is desirably within about 10 percent of the fourth enclosure pressure.
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公开(公告)号：US06835664B1
公开(公告)日：2004-12-28
申请号：US10609279
申请日：2003-06-26
IPC分类号： H01L21311
CPC分类号： C23C18/1283 , C23C18/1208 , C23C18/122 , C23C18/1245 , C23C18/125 , H01L21/02164 , H01L21/02282 , H01L21/283 , H01L21/28556 , H01L21/31 , H01L21/316 , H01L21/31612 , H01L21/318
摘要： The invention includes methods of forming films over substrates. A substrate is provided within a reaction chamber, and a mixture is also provided within the chamber. The mixture includes a precursor of a desired material within a supercritical fluid. The precursor is relatively reactive under one set of conditions and is relatively non-reactive under another set of conditions. The precursor and supercritical fluid mixture is initially provided in the chamber under the conditions at which the precursor is relatively non-reactive. Subsequently, and while maintaining the supercritical state of the supercritical fluid, the conditions within the reaction chamber are changed to the conditions under which the precursor is relatively reactive. The precursor reacts to form the desired material, and at least some of the desired material forms a film on the substrate.
摘要翻译： 本发明包括在基底上形成膜的方法。 在反应室内设置基板，并且还在室内设置混合物。 该混合物包括在超临界流体内的所需材料的前体。 前体在一组条件下是相对反应的，并且在另一组条件下相对不反应。 初始和超临界流体混合物最初在前体相对不反应的条件下在室中提供。 随后，在保持超临界流体的超临界状态的同时，将反应室内的条件变更为前体相对反应的条件。 前体反应形成所需的材料，并且所需材料中的至少一些在基材上形成膜。
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公开(公告)号：US06753271B2
公开(公告)日：2004-06-22
申请号：US10222282
申请日：2002-08-15
申请人： Demetrius Sarigiannis , Garo J. Derderian , Cem Basceri , Gurtej S. Sandhu , F. Daniel Gealy , Chris M. Carlson
发明人： Demetrius Sarigiannis , Garo J. Derderian , Cem Basceri , Gurtej S. Sandhu , F. Daniel Gealy , Chris M. Carlson
IPC分类号： H01L2144
CPC分类号： H01L21/32051 , C23C16/4404 , C23C16/4405 , C23C16/45531 , C23C16/45534 , H01L21/02178 , H01L21/02186 , H01L21/0228 , H01L21/28562 , H01L21/3141 , H01L21/31616
摘要： The invention includes an atomic layer deposition method of forming a layer of a deposited composition on a substrate. The method includes positioning a semiconductor substrate within an atomic layer deposition chamber. On the substrate, an intermediate composition monolayer is formed, followed by a desired deposited composition from reaction with the intermediate composition, collectively from flowing multiple different composition deposition precursors to the substrate within the deposition chamber. A material adheres to a chamber internal component surface from such sequentially forming. After such sequentially forming, a reactive gas flows to the chamber which is different in composition from the multiple different deposition precursors and which is effective to react with such adhering material. After the reactive gas flowing, such sequentially forming is repeated. Further implementations are contemplated.
摘要翻译： 本发明包括在基板上形成沉积的组合物层的原子层沉积方法。 该方法包括将半导体衬底定位在原子层沉积室内。 在基材上形成中间组合物单层，随后是与中间体组合物反应所需的沉积组合物，统称为将多种不同的组合物沉积前体流到沉积室内的基底。 材料粘附到室内部件表面，从而依次形成。 在这种顺序形成之后，反应性气体流入到与多种不同的沉积前体不同的组合物中，并有效地与这种粘附材料反应。 在反应气体流动之后，重复这种顺序形成。 考虑进一步的实现。
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