发明授权
- 专利标题: Thin film transistor array substrate and manufacturing method thereof
- 专利标题(中): 薄膜晶体管阵列基板及其制造方法
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申请号: US12435773申请日: 2009-05-05
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公开(公告)号: US07947985B2公开(公告)日: 2011-05-24
- 发明人: Dae-Cheol Kim , Woong-Kwon Kim , Sang-Youn Han , In-Woo Kim , Ho-Jun Lee , Byeong-Jae Ahn
- 申请人: Dae-Cheol Kim , Woong-Kwon Kim , Sang-Youn Han , In-Woo Kim , Ho-Jun Lee , Byeong-Jae Ahn
- 申请人地址: KR
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR
- 代理机构: Cantor Colburn LLP
- 优先权: KR10-2008-0055926 20080613; KR10-2008-0109513 20081105
- 主分类号: H01L27/14
- IPC分类号: H01L27/14
摘要:
A thin film transistor array substrate and its manufacturing method are disclosed. A thin film transistor (TFT) includes a gate electrode formed on a substrate, and source and drain electrodes formed on the gate electrode and separated from each other. A common line made of the same material as the gate electrode is formed on the substrate. A storage capacitor includes a storage electrode connected with a storage electrode line and a pixel electrode formed on the storage electrode. The storage electrode and the pixel electrode are formed by patterning a transparent conductive film, and accordingly, light can be transmitted through the region where the storage capacitor is formed to thus increase an aperture ratio.