Invention Grant
- Patent Title: Multilayer image sensor structure for reducing crosstalk
- Patent Title (中): 用于减少串扰的多层图像传感器结构
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Application No.: US12109134Application Date: 2008-04-24
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Publication No.: US07948018B2Publication Date: 2011-05-24
- Inventor: Vincent Venezia , Hidetoshi Nozaki , Duli Mao , Yin Qian , Hsin-Chih Tai , Howard E. Rhodes
- Applicant: Vincent Venezia , Hidetoshi Nozaki , Duli Mao , Yin Qian , Hsin-Chih Tai , Howard E. Rhodes
- Applicant Address: US CA Santa Clara
- Assignee: OmniVision Technologies, Inc.
- Current Assignee: OmniVision Technologies, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely Sokoloff Taylor & Zafman LLP
- Main IPC: H01L31/062
- IPC: H01L31/062
Abstract:
An image sensor pixel includes a substrate, an epitaxial layer, and a light collection region. The substrate is doped to have a first conductivity type. The epitaxial layer is disposed over the substrate and doped to have a second conductivity type opposite of the first conductivity type. The light collection region is disposed within the epitaxial layer for collecting photo-generated charge carriers. The light collection region is doped to have the first conductivity type as well.
Public/Granted literature
- US20090267070A1 Multilayer image sensor structure for reducing crosstalk Public/Granted day:2009-10-29
Information query
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