发明授权
- 专利标题： Semiconductor device and method for manufacturing semiconductor device
- 专利标题（中）： 半导体装置及半导体装置的制造方法
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申请号： US12339695申请日： 2008-12-19
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公开(公告)号： US07948062B2公开(公告)日： 2011-05-24
- 发明人: Kozo Makiyama , Toshihiro Ohki , Masahito Kanamura , Toshihide Kikkawa
- 申请人： Kozo Makiyama , Toshihiro Ohki , Masahito Kanamura , Toshihide Kikkawa
- 申请人地址： JP Kawasaki
- 专利权人： Fujitsu Limited
- 当前专利权人： Fujitsu Limited
- 当前专利权人地址： JP Kawasaki
- 代理机构： Westerman, Hattori, Daniels & Adrian, LLP
- 优先权： JP2007-341176 20071228
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L23/58
摘要：
A semiconductor device including a compound semiconductor laminated structure having a plurality of compound semiconductor layers formed over a semiconductor substrate, a first insulation film covering at least a part of a surface of the compound semiconductor laminated structure, and a second insulation film formed on the first insulation film, wherein the second insulation film includes more hydrogen than the first insulation film.
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