Invention Grant
- Patent Title: Edge removal of silicon-on-insulator transfer wafer
- Patent Title (中): 边缘去除绝缘体上硅转移晶片
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Application No.: US12033727Application Date: 2008-02-19
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Publication No.: US07951718B2Publication Date: 2011-05-31
- Inventor: Raymond John Donohoe , Krishna Vepa , Paul V. Miller , Ronald Rayandayan , Hong Wang
- Applicant: Raymond John Donohoe , Krishna Vepa , Paul V. Miller , Ronald Rayandayan , Hong Wang
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Kilpatrick, Townsend & Stockton LLP
- Main IPC: H01L21/302
- IPC: H01L21/302

Abstract:
A silicon-on-insulator transfer wafer having a front surface with a circumferential lip around a circular recess is polished. In one version, the circular recess on the front surface of the wafer is masked by filling the recess with spin-on-glass. The front surface of the wafer is exposed to an etchant to preferentially etch away the circumferential lip, while the circular recess is masked by the spin-on-glass. The spin-on glass is removed, and the front surface of the transfer wafer is polished. Other methods of removing the circumferential lip include applying a higher pressure to the circumferential lip in a polishing process, and directing a pressurized fluid jet at the base of the circumferential lip.
Public/Granted literature
- US20080138987A1 EDGE REMOVAL OF SILICON-ON-INSULATOR TRANSFER WAFER Public/Granted day:2008-06-12
Information query
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