Edge Removal Of Silicon-On-Insulator Transfer Wafer
    1.
    发明申请
    Edge Removal Of Silicon-On-Insulator Transfer Wafer 有权
    去绝缘硅绝缘体转移晶片的边缘

    公开(公告)号:US20090061545A1

    公开(公告)日:2009-03-05

    申请号:US12177752

    申请日:2008-07-22

    IPC分类号: H01L21/66 H01L21/306

    摘要: A silicon-on-insulator transfer wafer having a front surface with a circumferential lip around a circular recess is polished. In one version, the circular recess on the front surface of the wafer is masked by filling the recess with spin-on-glass. The front surface of the wafer is exposed to an etchant to preferentially etch away the circumferential lip, while the circular recess is masked by the spin-on-glass. The spin-on glass is removed, and the front surface of the transfer wafer is polished. Other methods of removing the circumferential lip include applying a higher pressure to the circumferential lip in a polishing process, and directing a pressurized fluid jet at the base of the circumferential lip.

    摘要翻译: 抛光具有围绕圆形凹槽的具有周向唇缘的前表面的绝缘体上硅转移晶片。 在一个版本中,通过用旋转玻璃填充凹槽来掩蔽晶片前表面上的圆形凹槽。 将晶片的前表面暴露于蚀刻剂以优先蚀刻掉周缘,同时圆形凹槽被旋涂玻璃掩蔽。 去除旋涂玻璃,并且转印晶片的前表面被抛光。 去除圆周唇缘的其它方法包括在抛光过程中向周缘施加更高的压力,并且在周向唇缘的底部引导加压流体射流。

    Edge removal of silicon-on-insulator transfer wafer
    2.
    发明授权
    Edge removal of silicon-on-insulator transfer wafer 有权
    边缘去除绝缘体上硅转移晶片

    公开(公告)号:US07402520B2

    公开(公告)日:2008-07-22

    申请号:US10998289

    申请日:2004-11-26

    IPC分类号: H01L21/461

    摘要: A silicon-on-insulator transfer wafer having a front surface with a circumferential lip around a circular recess is polished. In one version, the circular recess on the front surface of the wafer is masked by filling the recess with spin-on-glass. The front surface of the wafer is exposed to an etchant to preferentially etch away the circumferential lip, while the circular recess is masked by the spin-on-glass. The spin-on glass is removed, and the front surface of the transfer wafer is polished. Other methods of removing the circumferential lip include applying a higher pressure to the circumferential lip in a polishing process, and directing a pressurized fluid jet at the base of the circumferential lip.

    摘要翻译: 抛光具有围绕圆形凹槽的具有周向唇缘的前表面的绝缘体上硅转移晶片。 在一个版本中,通过用旋转玻璃填充凹槽来掩蔽晶片前表面上的圆形凹槽。 将晶片的前表面暴露于蚀刻剂以优先蚀刻掉周缘,同时圆形凹槽被旋涂玻璃掩蔽。 去除旋涂玻璃,并且转印晶片的前表面被抛光。 去除圆周唇缘的其它方法包括在抛光过程中向周缘施加更高的压力,并且在周向唇缘的底部引导加压流体射流。

    Edge removal of silicon-on-insulator transfer wafer
    3.
    发明授权
    Edge removal of silicon-on-insulator transfer wafer 有权
    边缘去除绝缘体上硅转移晶片

    公开(公告)号:US07951718B2

    公开(公告)日:2011-05-31

    申请号:US12033727

    申请日:2008-02-19

    IPC分类号: H01L21/302

    摘要: A silicon-on-insulator transfer wafer having a front surface with a circumferential lip around a circular recess is polished. In one version, the circular recess on the front surface of the wafer is masked by filling the recess with spin-on-glass. The front surface of the wafer is exposed to an etchant to preferentially etch away the circumferential lip, while the circular recess is masked by the spin-on-glass. The spin-on glass is removed, and the front surface of the transfer wafer is polished. Other methods of removing the circumferential lip include applying a higher pressure to the circumferential lip in a polishing process, and directing a pressurized fluid jet at the base of the circumferential lip.

    摘要翻译: 抛光具有围绕圆形凹槽的具有周向唇缘的前表面的绝缘体上硅转移晶片。 在一个版本中,通过用旋转玻璃填充凹槽来掩蔽晶片前表面上的圆形凹槽。 将晶片的前表面暴露于蚀刻剂以优先蚀刻掉周缘,同时圆形凹槽被旋涂玻璃掩蔽。 去除旋涂玻璃,并且转印晶片的前表面被抛光。 去除圆周唇缘的其它方法包括在抛光过程中向周缘施加更高的压力,并且在周向唇缘的底部引导加压流体射流。

    EDGE REMOVAL OF SILICON-ON-INSULATOR TRANSFER WAFER
    4.
    发明申请
    EDGE REMOVAL OF SILICON-ON-INSULATOR TRANSFER WAFER 有权
    绝缘体绝缘子转移膜的边缘去除

    公开(公告)号:US20080138987A1

    公开(公告)日:2008-06-12

    申请号:US12033727

    申请日:2008-02-19

    IPC分类号: H01L21/302

    摘要: A silicon-on-insulator transfer wafer having a front surface with a circumferential lip around a circular recess is polished. In one version, the circular recess on the front surface of the wafer is masked by filling the recess with spin-on-glass. The front surface of the wafer is exposed to an etchant to preferentially etch away the circumferential lip, while the circular recess is masked by the spin-on-glass. The spin-on glass is removed, and the front surface of the transfer wafer is polished. Other methods of removing the circumferential lip include applying a higher pressure to the circumferential lip in a polishing process, and directing a pressurized fluid jet at the base of the circumferential lip.

    摘要翻译: 抛光具有围绕圆形凹槽的具有周向唇缘的前表面的绝缘体上硅转移晶片。 在一个版本中,通过用旋转玻璃填充凹槽来掩蔽晶片前表面上的圆形凹槽。 将晶片的前表面暴露于蚀刻剂以优先蚀刻掉周缘,同时圆形凹槽被旋涂玻璃掩蔽。 去除旋涂玻璃,并且转印晶片的前表面被抛光。 去除圆周唇缘的其它方法包括在抛光过程中向周缘施加更高的压力,并且在周向唇缘的底部引导加压流体射流。