发明授权
- 专利标题: Edge removal of silicon-on-insulator transfer wafer
- 专利标题(中): 边缘去除绝缘体上硅转移晶片
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申请号: US12033727申请日: 2008-02-19
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公开(公告)号: US07951718B2公开(公告)日: 2011-05-31
- 发明人: Raymond John Donohoe , Krishna Vepa , Paul V. Miller , Ronald Rayandayan , Hong Wang
- 申请人: Raymond John Donohoe , Krishna Vepa , Paul V. Miller , Ronald Rayandayan , Hong Wang
- 申请人地址: US CA Santa Clara
- 专利权人: Applied Materials, Inc.
- 当前专利权人: Applied Materials, Inc.
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Kilpatrick, Townsend & Stockton LLP
- 主分类号: H01L21/302
- IPC分类号: H01L21/302
摘要:
A silicon-on-insulator transfer wafer having a front surface with a circumferential lip around a circular recess is polished. In one version, the circular recess on the front surface of the wafer is masked by filling the recess with spin-on-glass. The front surface of the wafer is exposed to an etchant to preferentially etch away the circumferential lip, while the circular recess is masked by the spin-on-glass. The spin-on glass is removed, and the front surface of the transfer wafer is polished. Other methods of removing the circumferential lip include applying a higher pressure to the circumferential lip in a polishing process, and directing a pressurized fluid jet at the base of the circumferential lip.
公开/授权文献
- US20080138987A1 EDGE REMOVAL OF SILICON-ON-INSULATOR TRANSFER WAFER 公开/授权日:2008-06-12
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