发明授权
- 专利标题： Integration of a sense FET into a discrete power MOSFET
- 专利标题（中）： 将感测FET集成到分立功率MOSFET中
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申请号： US12860777申请日： 2010-08-20
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公开(公告)号： US07952144B2公开(公告)日： 2011-05-31
- 发明人: Yi Su , Anup Bhalla , Daniel Ng
- 申请人： Yi Su , Anup Bhalla , Daniel Ng
- 申请人地址： BM Hamilton
- 专利权人： Alpha & Omega Semiconductor, Ltd
- 当前专利权人： Alpha & Omega Semiconductor, Ltd
- 当前专利权人地址： BM Hamilton
- 代理机构： JDI Patent
- 代理商 Joshua D. Isenberg
- 主分类号： H01L29/66
- IPC分类号： H01L29/66
摘要：
A semiconductor device includes a main field effect transistor (FET) and one or more sense FETs, and a common gate pad. The main FET and the one or more sense FETs are formed in a common substrate. The main FET and each of the sense FETs include a source terminal, a gate terminal and a drain terminal. The common gate pad connects the gate terminals of the main FET and the one or more sense FETs. An electrical isolation is disposed between the gate terminals of the main FET and the one or more sense FETs. Embodiments of this invention may be applied to both N-channel and P-channel MOSFET devices.
公开/授权文献
- US20100314693A1 INTEGRATION OF A SENSE FET INTO A DISCRETE POWER MOSFET 公开/授权日：2010-12-16
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