发明授权
- 专利标题： Method and apparatus for de-embedding on-wafer devices
- 专利标题（中）： 用于去嵌入晶片装置的方法和装置
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申请号： US12042606申请日： 2008-03-05
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公开(公告)号： US07954080B2公开(公告)日： 2011-05-31
- 发明人: Hsiao-Tsung Yen , Tzu-Jin Yeh , Sally Liu
- 申请人： Hsiao-Tsung Yen , Tzu-Jin Yeh , Sally Liu
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Haynes and Boone, LLP
- 主分类号： G06F17/50
- IPC分类号： G06F17/50
摘要：
A method and system for de-embedding an on-wafer device is disclosed. The method comprises representing the intrinsic characteristics of a test structure using a set of ABCD matrix components; determining the intrinsic characteristics arising from the test structure; and using the determined intrinsic characteristics of the test structure to produce a set of parameters representative of the intrinsic characteristics of a device-under-test (“DUT”).
公开/授权文献
- US20090224791A1 DE-Embedding Method For On-Wafer Devices 公开/授权日：2009-09-10
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