Invention Grant
- Patent Title: Method and apparatus for de-embedding on-wafer devices
- Patent Title (中): 用于去嵌入晶片装置的方法和装置
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Application No.: US12042606Application Date: 2008-03-05
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Publication No.: US07954080B2Publication Date: 2011-05-31
- Inventor: Hsiao-Tsung Yen , Tzu-Jin Yeh , Sally Liu
- Applicant: Hsiao-Tsung Yen , Tzu-Jin Yeh , Sally Liu
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G06F17/50
- IPC: G06F17/50

Abstract:
A method and system for de-embedding an on-wafer device is disclosed. The method comprises representing the intrinsic characteristics of a test structure using a set of ABCD matrix components; determining the intrinsic characteristics arising from the test structure; and using the determined intrinsic characteristics of the test structure to produce a set of parameters representative of the intrinsic characteristics of a device-under-test (“DUT”).
Public/Granted literature
- US20090224791A1 DE-Embedding Method For On-Wafer Devices Public/Granted day:2009-09-10
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