发明授权
- 专利标题: Method of removing photoresist and method of manufacturing a semiconductor device
- 专利标题(中): 去除光刻胶的方法和制造半导体器件的方法
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申请号: US11984340申请日: 2007-11-16
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公开(公告)号: US07959738B2公开(公告)日: 2011-06-14
- 发明人: Dae-Hyuk Kang , Hyo-San Lee , Dong-Gyun Han , Chang-Ki Hong , Kun-Tack Lee
- 申请人: Dae-Hyuk Kang , Hyo-San Lee , Dong-Gyun Han , Chang-Ki Hong , Kun-Tack Lee
- 申请人地址: KR Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Gyeonggi-do
- 代理机构: Harness, Dickey & Pierce, P.L.C.
- 优先权: KR10-2006-0113093 20061116
- 主分类号: H01L21/28
- IPC分类号: H01L21/28
摘要:
A method of removing a photoresist may include permeating supercritical carbon dioxide into the photoresist on a substrate having a conductive structure including a metal. The photoresist permeating the supercritical carbon dioxide may be easily removable. The photoresist permeating the supercritical carbon dioxide may be removed using a photoresist cleaning solution from the substrate. The photoresist cleaning solution may include an alkanolamine solution of about 8 percent by weight to about 20 percent by weight, a polar organic solution of about 25 percent by weight to about 40 percent by weight, a reducing agent of about 0.5 percent by weight to about 3 percent by weight with the remainder being water. The photoresist may be easily removed without damaging the conductive structure in a plasma process.
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