发明授权
- 专利标题: Reflective-type mask blank for EUV lithography
- 专利标题(中): EUV光刻用反射型掩模板
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申请号: US12694860申请日: 2010-01-27
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公开(公告)号: US07960077B2公开(公告)日: 2011-06-14
- 发明人: Yoshiaki Ikuta , Toshiyuki Uno , Ken Ebihara
- 申请人: Yoshiaki Ikuta , Toshiyuki Uno , Ken Ebihara
- 申请人地址: JP Tokyo
- 专利权人: Asahi Glass Company, Limited
- 当前专利权人: Asahi Glass Company, Limited
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 主分类号: G03F1/00
- IPC分类号: G03F1/00
摘要:
A reflective mask blank for EUV lithography including a substrate having a front surface and a rear surface, a reflective layer formed over the front surface of the substrate, an absorbing layer formed over the reflective layer, and a chucking layer formed on the rear surface of the substrate and positioned to chuck the substrate to an electrostatic chuck. The substrate has a non-conducting portion which eliminates electrical conduction between the reflective layer and the chucking layer and electrical conduction between the absorbing layer and the chucking layer, and the non-conducting portion is formed by forming a portion of the substrate covered with one or more covering members and preventing formation of the reflective layer and the absorbing layer.
公开/授权文献
- US20100167187A1 REFLECTIVE-TYPE MASK BLANK FOR EUV LITHOGRAPHY 公开/授权日:2010-07-01