公开(公告)号：US07960077B2

公开(公告)日：2011-06-14

申请号：US12694860

申请日：2010-01-27

申请人： Yoshiaki Ikuta ,  Toshiyuki Uno ,  Ken Ebihara

发明人： Yoshiaki Ikuta ,  Toshiyuki Uno ,  Ken Ebihara

IPC分类号： G03F1/00

CPC分类号： G03F1/24 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/38 ,  G03F1/40 ,  G03F7/70708 ,  G21K2201/067 ,  Y10T428/31616

摘要： A reflective mask blank for EUV lithography including a substrate having a front surface and a rear surface, a reflective layer formed over the front surface of the substrate, an absorbing layer formed over the reflective layer, and a chucking layer formed on the rear surface of the substrate and positioned to chuck the substrate to an electrostatic chuck. The substrate has a non-conducting portion which eliminates electrical conduction between the reflective layer and the chucking layer and electrical conduction between the absorbing layer and the chucking layer, and the non-conducting portion is formed by forming a portion of the substrate covered with one or more covering members and preventing formation of the reflective layer and the absorbing layer.

摘要翻译： 一种用于EUV光刻的反射掩模板，包括具有前表面和后表面的基板，形成在基板的前表面上的反射层，形成在反射层上的吸收层，以及形成在反射层的后表面上的夹持层 基板并定位成将基板夹持到静电卡盘。 衬底具有不导电部分，其消除了反射层和夹持层之间的电传导以及吸收层和夹持层之间的电传导，并且非导电部分通过形成覆盖有一个衬底的衬底的一部分而形成 或更多的覆盖构件，并且防止反射层和吸收层的形成。

公开(公告)号：US20070240453A1

公开(公告)日：2007-10-18

申请号：US11391343

申请日：2006-03-29

申请人： Toshiyuki Uno ,  Yoshiaki Ikuta ,  Mika Yokoyama ,  Ken Ebihara

发明人： Toshiyuki Uno ,  Yoshiaki Ikuta ,  Mika Yokoyama ,  Ken Ebihara

IPC分类号： C03B23/00

CPC分类号： C03C17/02 ,  B82Y10/00 ,  B82Y40/00 ,  C03C17/002 ,  C03C17/36 ,  C03C17/3665 ,  G03F1/24

摘要： To provide a method for smoothing a surface of a glass substrate having a concave defect, such as a pit or a scratch. A method for smoothing a surface of a glass substrate having a concave defect thereon, comprising: forming a film on the surface of the glass substrate having the concave defect by a dry deposition method, the film comprising a glass material having a fluid point Tf of 150° C. or above and of not higher than a strain point Ts (° C.) of the glass substrate; and heating the film of the glass material at a temperature of not lower than Tf and not higher than Ts to put the film in such state that the film of the glass material can flow so as to bury the concave defect, followed by cooling the film of the glass material, thereby to smooth the surface of the glass substrate having the concave defect.

摘要翻译： 提供一种用于平滑具有诸如凹坑或划痕的凹陷缺陷的玻璃基板的表面的方法。 一种用于使其上具有凹陷缺陷的玻璃基板的表面平滑的方法，包括：通过干法沉积法在具有凹陷缺陷的玻璃基板的表面上形成膜，所述膜包括具有流体点Tf的玻璃材料 150℃以上且不高于玻璃基板的应变点Ts（℃） 并且在不低于Tf且不高于Ts的温度下加热玻璃材料的膜以使膜处于玻璃材料的膜可以流动以便掩埋凹陷缺陷的状态，随后冷却膜 从而使具有凹陷缺陷的玻璃基板的表面光滑。

公开(公告)号：US20100167187A1

公开(公告)日：2010-07-01

申请号：US12694860

申请日：2010-01-27

申请人： Yoshiaki IKUTA ,  Toshiyuki Uno ,  Ken Ebihara

发明人： Yoshiaki IKUTA ,  Toshiyuki Uno ,  Ken Ebihara

IPC分类号： G03F1/00

CPC分类号： G03F1/24 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/38 ,  G03F1/40 ,  G03F7/70708 ,  G21K2201/067 ,  Y10T428/31616

摘要： A reflective mask blank for EUV lithography including a substrate having a front surface and a rear surface, a reflective layer formed over the front surface of the substrate, an absorbing layer formed over the reflective layer, and a chucking layer formed on the rear surface of the substrate and positioned to chuck the substrate to an electrostatic chuck. The substrate has a non-conducting portion which eliminates electrical conduction between the reflective layer and the chucking layer and electrical conduction between the absorbing layer and the chucking layer, and the non-conducting portion is formed by forming a portion of the substrate covered with one or more covering members and preventing formation of the reflective layer and the absorbing layer.

摘要翻译： 一种用于EUV光刻的反射掩模板，包括具有前表面和后表面的基板，形成在基板的前表面上的反射层，形成在反射层上的吸收层，以及形成在反射层的后表面上的夹持层 基板并定位成将基板夹持到静电卡盘。 衬底具有不导电部分，其消除了反射层和夹持层之间的电传导以及吸收层和夹持层之间的电传导，并且非导电部分通过形成覆盖有一个衬底的衬底的一部分而形成 或更多的覆盖构件，并且防止反射层和吸收层的形成。

公开(公告)号：US07712333B2

公开(公告)日：2010-05-11

申请号：US11391343

申请日：2006-03-29

申请人： Toshiyuki Uno ,  Yoshiaki Ikuta ,  Mika Yokoyama ,  Ken Ebihara

发明人： Toshiyuki Uno ,  Yoshiaki Ikuta ,  Mika Yokoyama ,  Ken Ebihara

IPC分类号： C03C17/02

CPC分类号： C03C17/02 ,  B82Y10/00 ,  B82Y40/00 ,  C03C17/002 ,  C03C17/36 ,  C03C17/3665 ,  G03F1/24

摘要： To provide a method for smoothing a surface of a glass substrate having a concave defect, such as a pit or a scratch.A method for smoothing a surface of a glass substrate having a concave defect thereon, comprising: forming a film on the surface of the glass substrate having the concave defect by a dry deposition method, the film comprising a glass material having a fluid point Tf of 150° C. or above and of not higher than a strain point Ts (° C.) of the glass substrate; and heating the film of the glass material at a temperature of not lower than Tf and not higher than Ts to put the film in such state that the film of the glass material can flow so as to bury the concave defect, followed by cooling the film of the glass material, thereby to smooth the surface of the glass substrate having the concave defect.

摘要翻译： 提供一种用于平滑具有诸如凹坑或划痕的凹陷缺陷的玻璃基板的表面的方法。 一种用于使其上具有凹陷缺陷的玻璃基板的表面平滑的方法，包括：通过干法沉积法在具有凹陷缺陷的玻璃基板的表面上形成膜，所述膜包括具有流体点Tf的玻璃材料 150℃以上且不高于玻璃基板的应变点Ts（℃） 并且在不低于Tf且不高于Ts的温度下加热玻璃材料的膜以使膜处于玻璃材料的膜可以流动以便掩埋凹陷缺陷的状态，随后冷却膜 从而使具有凹陷缺陷的玻璃基板的表面光滑。

公开(公告)号：US07678511B2

公开(公告)日：2010-03-16

申请号：US11330205

申请日：2006-01-12

申请人： Yoshiaki Ikuta ,  Toshiyuki Uno ,  Ken Ebihara

发明人： Yoshiaki Ikuta ,  Toshiyuki Uno ,  Ken Ebihara

IPC分类号： G03F1/00

CPC分类号： G03F1/24 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/38 ,  G03F1/40 ,  G03F7/70708 ,  G21K2201/067 ,  Y10T428/31616

摘要： There are provided a substrate with a reflective layer and an EUV mask blank, which can prevent particles from adhering to a surface of the reflective layer or an absorbing layer, or into a reflective layer or an absorbing layer during formation thereof by eliminating electrical connection between a film formed on a front surface of the substrate and a film formed on a rear surface of the substrate.A substrate with a reflective layer, which is usable to fabricate a reflective mask blank for EUV lithography, comprising a chucking layer formed on a rear surface opposite a surface with the reflective layer formed thereon, the chucking layer serving to chuck and support the substrate by an electrostatic chuck, wherein the reflective layer has no electrical connection to the chucking layer.

摘要翻译： 提供了具有反射层和EUV掩模坯料的基板，其可以防止颗粒在其形成期间粘附到反射层或吸收层的表面，或者通过消除反射层或吸收层之间的电连接 形成在基板的前表面上的膜和形成在基板的后表面上的膜。 具有反射层的基板，其可用于制造用于EUV光刻的反射掩模板，包括形成在与形成在其上的反射层相反的表面的后表面上的夹持层，夹持层用于卡盘并支撑基板， 静电卡盘，其中反射层与夹持层没有电连接。

公开(公告)号：US20070160916A1

公开(公告)日：2007-07-12

申请号：US11330205

申请日：2006-01-12

申请人： Yoshiaki Ikuta ,  Toshiyuki Uno ,  Ken Ebihara

发明人： Yoshiaki Ikuta ,  Toshiyuki Uno ,  Ken Ebihara

IPC分类号： B32B9/00 ,  B32B17/06 ,  G03C5/00 ,  B32B17/10 ,  G21K5/00 ,  G03F1/00

CPC分类号： G03F1/24 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/38 ,  G03F1/40 ,  G03F7/70708 ,  G21K2201/067 ,  Y10T428/31616

摘要： There are provided a substrate with a reflective layer and an EUV mask blank, which can prevent particles from adhering to a surface of the reflective layer or an absorbing layer, or into a reflective layer or an absorbing layer during formation thereof by eliminating electrical connection between a film formed on a front surface of the substrate and a film formed on a rear surface of the substrate. A substrate with a reflective layer, which is usable to fabricate a reflective mask blank for EUV lithography, comprising a chucking layer formed on a rear surface opposite a surface with the reflective layer formed thereon, the chucking layer serving to chuck and support the substrate by an electrostatic chuck, wherein the reflective layer has no electrical connection to the chucking layer.

摘要翻译： 提供了具有反射层和EUV掩模坯料的基板，其可以防止颗粒在其形成期间粘附到反射层或吸收层的表面，或者通过消除反射层或吸收层之间的电连接 形成在基板的前表面上的膜和形成在基板的后表面上的膜。 具有反射层的基板，其可用于制造用于EUV光刻的反射掩模板，包括形成在与形成在其上的反射层相反的表面的后表面上的夹持层，夹持层用于卡盘并支撑基板， 静电卡盘，其中反射层与夹持层没有电连接。

公开(公告)号：US20060007433A1

公开(公告)日：2006-01-12

申请号：US10885641

申请日：2004-07-08

申请人： Yoshiaki Ikuta ,  Toshiyuki Uno

发明人： Yoshiaki Ikuta ,  Toshiyuki Uno

IPC分类号： G01N21/00

CPC分类号： B82Y40/00 ,  B82Y10/00 ,  G03F1/24 ,  G03F1/72 ,  G03F1/84 ,  G03F7/70591 ,  G03F7/70958 ,  G21K1/062 ,  G21K2201/067

摘要： A defect repair device includes a defect inspection unit configured to find a size of a protruding defect on a front surface of a multi-layer film having a rear surface opposite to the front surface, a calculation unit configured to calculate a repair energy so as to repair the protruding defect based on the size of the protruding defect found by the defect inspection unit, an energy supplier, and an energy controller configured to control the energy supplier to supply the repair energy calculated by the calculation unit to a portion in the multi-layer film from the rear surface of the multi-layer film so as to cause a decrease in a volume of the portion and retract the protruding defect into the multi-layer film.

摘要翻译： 缺陷修复装置包括：缺陷检查单元，被配置为在具有与前表面相对的后表面的多层膜的前表面上发现突出缺陷的尺寸;计算单元，被配置为计算修复能量，以便 基于由缺陷检查单元，能量供应器和能量控制器发现的突出缺陷的尺寸来修复突出缺陷，能量控制器被配置为控制能量供应商将由计算单元计算的修复能量提供给多维度的部分， 从多层膜的背面形成多层膜，使得该部分的体积减小并将突出缺陷缩回到多层膜中。

公开(公告)号：US08168352B2

公开(公告)日：2012-05-01

申请号：US13004081

申请日：2011-01-11

申请人： Kazuyuki Hayashi ,  Toshiyuki Uno ,  Ken Ebihara

发明人： Kazuyuki Hayashi ,  Toshiyuki Uno ,  Ken Ebihara

IPC分类号： G03F1/00

CPC分类号： G03F1/24 ,  B82Y10/00 ,  B82Y40/00

摘要： Provision of an EUV mask whereby an influence of reflected light from a region outside a mask pattern region is suppressed, and an EUV mask blank to be employed for production of such an EUV mask.A reflective mask for EUV lithography (EUVL), comprising a substrate having a mask pattern region and an EUV light-absorbing region located outside the mask pattern region; a reflective layer provided on the mask pattern region of the substrate for reflecting EUV light and having a portion on which an absorber layer is present and a portion on which no absorber layer is present; the portion on which an absorber layer is present and the portion on which no absorber layer is present being arranged so as to constitute a mask pattern; wherein the reflectivity of a surface of the absorber layer for EUV light is from 5 to 15% and the reflectivity of a surface of the EUV light-absorbing region for EUV light is at most 1%.

摘要翻译： 提供EUV掩模，从而抑制来自掩模图案区域外的区域的反射光的影响，以及用于生产这种EUV掩模的EUV掩模空白。 一种用于EUV光刻（EUVL）的反射掩模，包括具有掩模图案区域的衬底和位于掩模图案区域外部的EUV光吸收区域; 反射层，设置在用于反射EUV光的基板的掩模图案区域上，并且具有其上存在吸收体层的部分和不存在吸收层的部分; 存在吸收层的部分和没有吸收层的部分被布置成构成掩模图案; 其中用于EUV光的吸收体层的表面的反射率为5〜15％，EUV光的EUV吸光区域的表面的反射率为1％以下。

公开(公告)号：US08029950B2

公开(公告)日：2011-10-04

申请号：US12855053

申请日：2010-08-12

申请人： Kazuyuki Hayashi ,  Toshiyuki Uno ,  Ken Ebihara

发明人： Kazuyuki Hayashi ,  Toshiyuki Uno ,  Ken Ebihara

IPC分类号： G03F1/00

CPC分类号： G03F1/24 ,  B82Y10/00 ,  B82Y40/00

摘要： A reflective mask blank for EUV lithography is provided which has an absorber layer wherein stress and crystal structure can be easily controlled.A reflective mask blank for EUV lithography, which comprises a substrate, and at least a reflective layer for reflecting EUV light and an absorber layer for absorbing EUV light formed in this order on the substrate, wherein the absorber layer contains tantalum (Ta), nitrogen (N) and hydrogen (H); and in the absorber layer, the total content of Ta and N is from 50 to 99.9 at %, and the content of H is from 0.1 to 50 at %.

摘要翻译： 提供了用于EUV光刻的反射掩模板，其具有可以容易地控制应力和晶体结构的吸收层。 一种用于EUV光刻的反射掩模板，其包括衬底，以及用于反射EUV光的至少反射层和用于吸收在衬底上依次形成的EUV光的吸收层，其中吸收层包含钽（Ta），氮 （N）和氢（H）; 在吸收层中，Ta和N的总含量为50〜99.9原子％，H的含量为0.1〜50原子％。

公开(公告)号：US20100304283A1

公开(公告)日：2010-12-02

申请号：US12855053

申请日：2010-08-12

申请人： Kazuyuki Hayashi ,  Toshiyuki Uno ,  Ken Ebihara

发明人： Kazuyuki Hayashi ,  Toshiyuki Uno ,  Ken Ebihara

IPC分类号： G03F1/00

CPC分类号： G03F1/24 ,  B82Y10/00 ,  B82Y40/00

摘要： A reflective mask blank for EUV lithography is provided which has an absorber layer wherein stress and crystal structure can be easily controlled.A reflective mask blank for EUV lithography, which comprises a substrate, and at least a reflective layer for reflecting EUV light and an absorber layer for absorbing EUV light formed in this order on the substrate, wherein the absorber layer contains tantalum (Ta), nitrogen (N) and hydrogen (H); and in the absorber layer, the total content of Ta and N is from 50 to 99.9 at %, and the content of H is from 0.1 to 50 at %.

摘要翻译： 提供了用于EUV光刻的反射掩模板，其具有可以容易地控制应力和晶体结构的吸收层。 一种用于EUV光刻的反射掩模板，其包括衬底，以及用于反射EUV光的至少反射层和用于吸收在衬底上依次形成的EUV光的吸收层，其中吸收层包含钽（Ta），氮 （N）和氢（H）; 在吸收层中，Ta和N的总含量为50〜99.9原子％，H的含量为0.1〜50原子％。