发明授权
- 专利标题： Semiconductor device manufacturing method and semiconductor device
- 专利标题（中）： 半导体器件制造方法和半导体器件
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申请号： US12805940申请日： 2010-08-25
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公开(公告)号： US07960764B2公开(公告)日： 2011-06-14
- 发明人: Toshiaki Idaka , Kazuyuki Yahiro
- 申请人： Toshiaki Idaka , Kazuyuki Yahiro
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权： JP2008-128073 20080515
- 主分类号： H01L29/76
- IPC分类号： H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113 ; H01L31/119 ; H01L23/58
摘要：
Disclosed is a semiconductor device manufacturing method in which a silicon nitride film is formed to cover an n-channel transistor formed on a semiconductor substrate and to apply a tensile stress in a channel length direction to a channel of the n-channel transistor, the method includes: forming a first-layer silicon nitride film above the n-channel transistor; irradiating the first-layer silicon nitride film with ultraviolet radiation; and after the ultraviolet irradiation, forming at least one silicon nitride film thinner than the first-layer silicon nitride film above the first-layer silicon nitride film. Silicon nitride films formed to apply the tensile stress is formed by respective steps.
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