发明授权
- 专利标题: Semiconductor device
- 专利标题(中): 半导体器件
-
申请号: US12629981申请日: 2009-12-03
-
公开(公告)号: US07961545B2公开(公告)日: 2011-06-14
- 发明人: Masanao Yamaoka , Koichiro Ishibashi , Shigezumi Matsui , Kenichi Osada
- 申请人: Masanao Yamaoka , Koichiro Ishibashi , Shigezumi Matsui , Kenichi Osada
- 申请人地址: JP Kawasaki-shi
- 专利权人: Renesas Electronics Corporation
- 当前专利权人: Renesas Electronics Corporation
- 当前专利权人地址: JP Kawasaki-shi
- 代理机构: Miles & Stockbridge P.C.
- 优先权: JPP2001-324357 20011023
- 主分类号: G11C5/14
- IPC分类号: G11C5/14
摘要:
A logic circuit in a system LSI is provided with a power switch so as to cut off the switch at the time of standby, reducing leakage current. At the same time, an SRAM circuit of the system LSI controls a substrate bias to reduce leakage current.
公开/授权文献
- US20100080046A1 SEMICONDUCTOR DEVICE 公开/授权日:2010-04-01
信息查询