发明授权
- 专利标题： Semiconductor light-emitting device and method of manufacturing the same
- 专利标题（中）： 半导体发光装置及其制造方法
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申请号： US12065795申请日： 2006-09-05
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公开(公告)号： US07964868B2公开(公告)日： 2011-06-21
- 发明人: Akira Nakagawa , Yasube Kashiwaba , Ikuo Niikura
- 申请人： Akira Nakagawa , Yasube Kashiwaba , Ikuo Niikura
- 申请人地址： JP Kitakami-shi JP Morioka-shi
- 专利权人： Citizen Tohoku Co., Ltd.,Incorporated National University Iwate University
- 当前专利权人： Citizen Tohoku Co., Ltd.,Incorporated National University Iwate University
- 当前专利权人地址： JP Kitakami-shi JP Morioka-shi
- 代理机构： Westerman, Hattori, Daniels & Adrian, LLP
- 优先权： JP2005-257781 20050906
- 国际申请： PCT/JP2006/317569 WO 20060905
- 国际公布： WO2007/029711 WO 20070315
- 主分类号： H01L29/10
- IPC分类号： H01L29/10
摘要：
Disclosed is a semiconductor light-emitting device wherein a pn junction is formed by forming, as a p-type layer (11), a semiconductor thin film which is composed of a ZnO compound doped with nitrogen on an n-type ZnO bulk single crystal substrate (10) whose resistance is lowered by being doped with donor impurities. It is preferable to form the p-type layer (11) on a zinc atom containing surface of the n-type ZnO bulk single crystal substrate (10).
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