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公开(公告)号：US07964868B2
公开(公告)日：2011-06-21
申请号：US12065795
申请日：2006-09-05
申请人： Akira Nakagawa , Yasube Kashiwaba , Ikuo Niikura
发明人： Akira Nakagawa , Yasube Kashiwaba , Ikuo Niikura
IPC分类号： H01L29/10
CPC分类号： H01L33/285 , C23C14/042 , C23C14/086 , C23C14/32 , C30B23/00 , C30B23/02 , C30B29/16 , H01L21/02403 , H01L21/02433 , H01L21/02554 , H01L21/02576 , H01L21/02609
摘要： Disclosed is a semiconductor light-emitting device wherein a pn junction is formed by forming, as a p-type layer (11), a semiconductor thin film which is composed of a ZnO compound doped with nitrogen on an n-type ZnO bulk single crystal substrate (10) whose resistance is lowered by being doped with donor impurities. It is preferable to form the p-type layer (11) on a zinc atom containing surface of the n-type ZnO bulk single crystal substrate (10).
摘要翻译： 公开了一种半导体发光器件，其中通过在n型ZnO体单晶上形成由掺杂氮的ZnO化合物构成的p型层（11）形成pn结， 衬底（10），其电阻通过掺杂施主杂质而降低。 优选在n型ZnO体单晶衬底（10）的含锌原子表面上形成p型层（11）。
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公开(公告)号：US20090267063A1
公开(公告)日：2009-10-29
申请号：US12065795
申请日：2006-09-05
申请人： Akira Nakagawa , Yasube Kashiwaba , Ikuo Niikura
发明人： Akira Nakagawa , Yasube Kashiwaba , Ikuo Niikura
IPC分类号： H01L33/00
CPC分类号： H01L33/285 , C23C14/042 , C23C14/086 , C23C14/32 , C30B23/00 , C30B23/02 , C30B29/16 , H01L21/02403 , H01L21/02433 , H01L21/02554 , H01L21/02576 , H01L21/02609
摘要： Disclosed is a semiconductor light-emitting device wherein a pn junction is formed by forming, as a p-type layer (11), a semiconductor thin film which is composed of a ZnO compound doped with nitrogen on an n-type ZnO bulk single crystal substrate (10) whose resistance is lowered by being doped with donor impurities. It is preferable to form the p-type layer (11) on a zinc atom containing surface of the n-type ZnO bulk single crystal substrate (10).
摘要翻译： 公开了一种半导体发光器件，其中通过在n型ZnO体单晶上形成由掺杂氮的ZnO化合物构成的p型层（11）形成pn结， 衬底（10），其电阻通过掺杂施主杂质而降低。 优选在n型ZnO体单晶衬底（10）的含锌原子表面上形成p型层（11）。
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公开(公告)号：US07973379B2
公开(公告)日：2011-07-05
申请号：US11388052
申请日：2006-03-23
申请人： Mayo Sugibuchi , Kohsuke Takahashi , Shunsuke Goto , Yasube Kashiwaba , Haruyuki Endo , Tatsuo Hasegawa , Fukunori Izumida , Eriko Ohshima
发明人： Mayo Sugibuchi , Kohsuke Takahashi , Shunsuke Goto , Yasube Kashiwaba , Haruyuki Endo , Tatsuo Hasegawa , Fukunori Izumida , Eriko Ohshima
IPC分类号： H01L31/07
CPC分类号： G01J1/429 , H01L31/0296 , H01L31/108
摘要： A photovoltaic ultraviolet sensor comprises a zinc oxide single crystal substrate. On the +c face of the zinc oxide single crystal substrate, an ultraviolet receiver is formed. The exemplary ultraviolet receiver includes a Schottky electrode which, when receiving ultraviolet rays, produces a voltage in cooperation with the zinc oxide single crystal substrate. The ultraviolet sensor does not have any sensitivity to the visible rays. The ultraviolet sensor has a relatively fast response of several microseconds.
摘要翻译： 光伏紫外线传感器包括氧化锌单晶基板。 在氧化锌单晶基板的+ c面上形成紫外线接收体。 示例性紫外线接收器包括肖特基电极，当接收紫外线时，与氧化锌单晶衬底配合产生电压。 紫外线传感器对可见光线没有任何敏感性。 紫外线传感器具有几微秒的相对较快的响应。
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公开(公告)号：US20070145499A1
公开(公告)日：2007-06-28
申请号：US11388052
申请日：2006-03-23
申请人： Mayo Sugibuchi , Kohsuke Takahashi , Shunsuke Goto , Yasube Kashiwaba , Haruyuki Endo , Tatsuo Hasegawa , Fukunori Izumida , Eriko Ohshima
发明人： Mayo Sugibuchi , Kohsuke Takahashi , Shunsuke Goto , Yasube Kashiwaba , Haruyuki Endo , Tatsuo Hasegawa , Fukunori Izumida , Eriko Ohshima
IPC分类号： H01L29/82
CPC分类号： G01J1/429 , H01L31/0296 , H01L31/108
摘要： A photovoltaic ultraviolet sensor comprises a zinc oxide single crystal substrate. On the +c face of the zinc oxide single crystal substrate, an ultraviolet receiver is formed. The exemplary ultraviolet receiver includes a Schottky electrode which, when receiving ultraviolet rays, produces a voltage in cooperation with the zinc oxide single crystal substrate. The ultraviolet sensor does not have any sensitivity to the visible rays. The ultraviolet sensor has a relatively fast response of several microseconds.
摘要翻译： 光伏紫外线传感器包括氧化锌单晶基板。 在氧化锌单晶基板的+ c面上形成紫外线接收体。 示例性紫外线接收器包括肖特基电极，当接收紫外线时，与氧化锌单晶衬底配合产生电压。 紫外线传感器对可见光线没有任何敏感性。 紫外线传感器具有几微秒的相对较快的响应。
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