公开(公告)号：US20090267063A1

公开(公告)日：2009-10-29

申请号：US12065795

申请日：2006-09-05

申请人： Akira Nakagawa ,  Yasube Kashiwaba ,  Ikuo Niikura

发明人： Akira Nakagawa ,  Yasube Kashiwaba ,  Ikuo Niikura

IPC分类号： H01L33/00

CPC分类号： H01L33/285 ,  C23C14/042 ,  C23C14/086 ,  C23C14/32 ,  C30B23/00 ,  C30B23/02 ,  C30B29/16 ,  H01L21/02403 ,  H01L21/02433 ,  H01L21/02554 ,  H01L21/02576 ,  H01L21/02609

摘要： Disclosed is a semiconductor light-emitting device wherein a pn junction is formed by forming, as a p-type layer (11), a semiconductor thin film which is composed of a ZnO compound doped with nitrogen on an n-type ZnO bulk single crystal substrate (10) whose resistance is lowered by being doped with donor impurities. It is preferable to form the p-type layer (11) on a zinc atom containing surface of the n-type ZnO bulk single crystal substrate (10).

摘要翻译： 公开了一种半导体发光器件，其中通过在n型ZnO体单晶上形成由掺杂氮的ZnO化合物构成的p型层（11）形成pn结， 衬底（10），其电阻通过掺杂施主杂质而降低。 优选在n型ZnO体单晶衬底（10）的含锌原子表面上形成p型层（11）。

公开(公告)号：US20060124051A1

公开(公告)日：2006-06-15

申请号：US11239214

申请日：2005-09-30

申请人： Kenji Yoshioka ,  Hiroshi Yoneyama ,  Katsumi Maeda ,  Ikuo Niikura ,  Mitsuru Sato ,  Masumi Ito

发明人： Kenji Yoshioka ,  Hiroshi Yoneyama ,  Katsumi Maeda ,  Ikuo Niikura ,  Mitsuru Sato ,  Masumi Ito

IPC分类号： C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

CPC分类号： C30B7/10 ,  C30B7/00 ,  C30B29/16

摘要： An objective of the present invention is to provide a zinc oxide (ZnO) single crystal whose electroconductivity is excellent and which has a high quality. The invention relates to a zinc oxide single crystal whose concentration of metals other than zinc in the crystal fulfills the following equation: [−cM]/[+cM]≧3wherein M is a metal other than zinc, [−cM] is a concentration of M in a −c region in the zinc oxide crystal, and [+cM] is a concentration of M in a +c region in the zinc oxide crystal.

摘要翻译： 本发明的目的是提供一种其导电性优异且质量高的氧化锌（ZnO）单晶。 本发明涉及一种氧化锌单晶，其晶体中锌以外的金属的浓度满足以下等式：<？在线公式描述=“在线公式”end =“lead”？> [ - cM] / [+ cM]> = 3 <？in-line-formula description =“In-line Formulas”end =“tail”？>其中M是除锌以外的金属，[-cM] -c区域，[+ cM]是氧化锌晶体中+ c区域中的M的浓度。

公开(公告)号：US07964868B2

公开(公告)日：2011-06-21

申请号：US12065795

申请日：2006-09-05

申请人： Akira Nakagawa ,  Yasube Kashiwaba ,  Ikuo Niikura

发明人： Akira Nakagawa ,  Yasube Kashiwaba ,  Ikuo Niikura

IPC分类号： H01L29/10

CPC分类号： H01L33/285 ,  C23C14/042 ,  C23C14/086 ,  C23C14/32 ,  C30B23/00 ,  C30B23/02 ,  C30B29/16 ,  H01L21/02403 ,  H01L21/02433 ,  H01L21/02554 ,  H01L21/02576 ,  H01L21/02609

摘要： Disclosed is a semiconductor light-emitting device wherein a pn junction is formed by forming, as a p-type layer (11), a semiconductor thin film which is composed of a ZnO compound doped with nitrogen on an n-type ZnO bulk single crystal substrate (10) whose resistance is lowered by being doped with donor impurities. It is preferable to form the p-type layer (11) on a zinc atom containing surface of the n-type ZnO bulk single crystal substrate (10).

摘要翻译： 公开了一种半导体发光器件，其中通过在n型ZnO体单晶上形成由掺杂氮的ZnO化合物构成的p型层（11）形成pn结， 衬底（10），其电阻通过掺杂施主杂质而降低。 优选在n型ZnO体单晶衬底（10）的含锌原子表面上形成p型层（11）。

公开(公告)号：US20080056984A1

公开(公告)日：2008-03-06

申请号：US11576408

申请日：2005-09-21

申请人： Kenji Yoshioka ,  Hiroshi Yoneyama ,  Katsumi Maeda ,  Ikuo Niikura ,  Mitsuru Sato ,  Masumi Ito ,  Fumio Orito

发明人： Kenji Yoshioka ,  Hiroshi Yoneyama ,  Katsumi Maeda ,  Ikuo Niikura ,  Mitsuru Sato ,  Masumi Ito ,  Fumio Orito

IPC分类号： C30B29/16 ,  C30B7/10

CPC分类号： C30B29/16 ,  C30B7/10

摘要： Provided is a single crystal with a hexagonal wurtzite structure which is useful as a substrate for various devices and has high purity and is uniform. The single crystal with a hexagonal wurtzite structures which is obtained by a crystal growth on at least an m-plane of a columnar seed crystal and represented by AX (A representing an electropositive element and X representing an electronegative element) is characterized in that a variation in the concentration of a metal other than the electropositive element A and having a concentration of 0.1 to 50 ppm is within 100%.

摘要翻译： 提供具有六方纤锌矿结构的单晶，其可用作各种装置的基板，并且具有高纯度并且均匀。 通过在柱状晶种的至少m面上由AX（表示正电荷的元素和表示电负性元素的X）表示的晶体生长获得的具有六方纤锌矿结构的单晶的特征在​​于， 在正电性元素A以外的金属浓度为0.1〜50ppm的浓度为100％以下。