Invention Grant
US07967996B2 Process for wafer backside polymer removal and wafer front side photoresist removal
失效
用于晶片背面聚合物去除和晶片前端光致抗蚀剂去除的工艺
- Patent Title: Process for wafer backside polymer removal and wafer front side photoresist removal
- Patent Title (中): 用于晶片背面聚合物去除和晶片前端光致抗蚀剂去除的工艺
-
Application No.: US11801409Application Date: 2007-05-08
-
Publication No.: US07967996B2Publication Date: 2011-06-28
- Inventor: Kenneth S. Collins , Hiroji Hanawa , Andrew Nguyen , Shahid Rauf , Ajit Balakrishna , Valentin N. Todorow , Kartik Ramaswamy , Martin Jeffrey Salinas , Imad Yousif , Walter R. Merry , Ying Rui , Michael R. Rice
- Applicant: Kenneth S. Collins , Hiroji Hanawa , Andrew Nguyen , Shahid Rauf , Ajit Balakrishna , Valentin N. Todorow , Kartik Ramaswamy , Martin Jeffrey Salinas , Imad Yousif , Walter R. Merry , Ying Rui , Michael R. Rice
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agent Robert M. Wallace
- Main IPC: B44C1/22
- IPC: B44C1/22
Abstract:
A process is provided for removing polymer from a backside of a workpiece and/or photoresist from a front side of the workpiece. For backside polymer removal, the wafer is positioned near the ceiling to above a localized or remote plasma source having a side outlet through the sidewall of the chamber, and backside polymer is removed by rotating the workpiece while flowing plasma by-products from the side outlet to the wafer backside. For front side photoresist removal, the wafer is positioned away from the ceiling and below the side outlet of the localized plasma source, and front side photoresist is remove by rotating the workpiece while flowing plasma by-products from the side outlet to the wafer front side.
Public/Granted literature
- US20080179291A1 Process for wafer backside polymer removal and wafer front side photoresist removal Public/Granted day:2008-07-31
Information query
