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US07968275B2 Method of forming a pattern using a photoresist composition for immersion lithography 有权
使用用于浸渍光刻的光致抗蚀剂组合物形成图案的方法

Method of forming a pattern using a photoresist composition for immersion lithography
摘要：
A photoresist composition for immersion lithography and a method of forming a photoresist pattern using the photoresist composition are disclosed. The photoresist composition includes a photosensitive polymer including a cycloaliphatic group blocked with at least two cyclic acetal groups as a side chain, a photoacid generator and an organic solvent. The hydrophobic photoresist composition may be changed into the hydrophilic photoresist composition by an exposure process. Thus, before the exposure process, the photoresist composition may be insoluble in a liquid for the immersion lithography. After the exposure process, an exposure portion of a photoresist film formed using the photoresist composition may be effectively dissolved in a developing solution to form a uniform photoresist pattern.
摘要（中）：

公开了一种用于浸没式光刻的光致抗蚀剂组合物和使用光致抗蚀剂组合物形成光致抗蚀剂图案的方法。 光致抗蚀剂组合物包括光敏聚合物，其包含用作为侧链的至少两个环状缩醛基封端的脂环族基团，光酸产生剂和有机溶剂。 疏水性光致抗蚀剂组合物可通过曝光方法改变为亲水性光致抗蚀剂组合物。 因此，在曝光处理之前，光致抗蚀剂组合物可能不溶于用于浸渍光刻的液体。 在曝光处理之后，使用光致抗蚀剂组合物形成的光致抗蚀剂膜的曝光部分可以有效地溶解在显影液中以形成均匀的光致抗蚀剂图案。

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