发明授权
- 专利标题： Non-volatile semiconductor memory devices
- 专利标题（中）： 非易失性半导体存储器件
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申请号： US12503354申请日： 2009-07-15
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公开(公告)号： US07968931B2公开(公告)日： 2011-06-28
- 发明人: Chang-Hyun Lee , Jung-Dal Choi , Byoung-Woo Ye
- 申请人： Chang-Hyun Lee , Jung-Dal Choi , Byoung-Woo Ye
- 申请人地址： KR
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR
- 代理机构： Myers Bigel Sibley & Sajovec, PA
- 优先权： KR2001-0037421 20010628; KR2002-0005622 20020131; KR2003-0026776 20030428
- 主分类号： H01L29/788
- IPC分类号： H01L29/788
摘要：
A non-volatile memory device includes a tunneling insulating layer on a semiconductor substrate, a charge storage layer, a blocking insulating layer, and a gate electrode. The charge storage layer is on the tunnel insulating layer and has a smaller band gap than the tunnel insulating layer and has a greater band gap than the semiconductor substrate. The blocking insulating layer is on the charge storage layer and has a greater band gap than the charge storage layer and has a smaller band gap than the tunnel insulating layer. The gate electrode is on the blocking insulating layer.
公开/授权文献
- US20090294838A1 NON-VOLATILE SEMICONDUCTOR MEMORY DEVICES 公开/授权日：2009-12-03
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