发明授权
US07969693B2 Tunnel magnetoresistive sensor in which at least part of pinned layer is composed of CoFeB layer and method for manufacturing the tunnel magnetoresistive sensor
有权
隧道磁阻传感器，其中至少部分被钉扎层由CoFeB层组成，隧道磁阻传感器的制造方法
- 专利标题： Tunnel magnetoresistive sensor in which at least part of pinned layer is composed of CoFeB layer and method for manufacturing the tunnel magnetoresistive sensor
- 专利标题（中）： 隧道磁阻传感器，其中至少部分被钉扎层由CoFeB层组成，隧道磁阻传感器的制造方法
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申请号： US11857921申请日： 2007-09-19
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公开(公告)号： US07969693B2公开(公告)日： 2011-06-28
- 发明人: Kazuaki Ikarashi , Eiji Umetsu , Kenichi Tanaka , Kazumasa Nishimura , Masamichi Saito , Yosuke Ide , Ryo Nakabayashi , Yoshihiro Nishiyama , Hidekazu Kobayashi , Naoya Hasegawa
- 申请人： Kazuaki Ikarashi , Eiji Umetsu , Kenichi Tanaka , Kazumasa Nishimura , Masamichi Saito , Yosuke Ide , Ryo Nakabayashi , Yoshihiro Nishiyama , Hidekazu Kobayashi , Naoya Hasegawa
- 申请人地址： JP Tokyo
- 专利权人： Alps Electric Co., Ltd.
- 当前专利权人： Alps Electric Co., Ltd.
- 当前专利权人地址： JP Tokyo
- 代理机构： Brinks Hofer Gilson & Lione
- 优先权： JP2006-255646 20060921; JP2007-065628 20070314
- 主分类号： G11B5/39
- IPC分类号： G11B5/39
摘要：
A tunnel magnetoresistive sensor includes a pinned magnetic layer, an insulating barrier layer formed of Mg—O, and a free magnetic layer. A barrier-layer-side magnetic sublayer constituting at least part of the pinned magnetic layer and being in contact with the insulating barrier layer includes a first magnetic region formed of CoFeB or FeB and a second magnetic region formed of CoFe or Fe. The second magnetic region is disposed between the first magnetic region and the insulating barrier layer.
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