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    Spin-valve element having fixed layer containing nano-oxide layer
    4.
    发明授权
    Spin-valve element having fixed layer containing nano-oxide layer 失效
    旋转阀元件具有含有纳米氧化物层的固定层

    公开(公告)号：US07433161B2

    公开(公告)日：2008-10-07

    申请号：US11034386

    申请日：2005-01-12

    申请人： Kazuaki Ikarashi ,  Naoya Hasegawa ,  Fumihito Koike ,  Eiji Umetsu

    发明人： Kazuaki Ikarashi ,  Naoya Hasegawa ,  Fumihito Koike ,  Eiji Umetsu

    IPC分类号： G11B5/39

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B2005/3996

    摘要： A nonmagnetic material-noncontact layer forming a fixed magnetic layer is formed using CoFe, a nonmagnetic material-contact layer is formed using Co, and an NOL (Nano-Oxide Layer) is provided between the nonmagnetic material-noncontact layer and the nonmagnetic material-contact layer. In addition, the average film thickness of the nonmagnetic material-contact layer is set in the range of 16 to 19 Å. Accordingly, compared to a three-layered structure composed of CoFe, an NOL, and CoFe or a three-layered structure composed of Co, an NOL, and Co, which has been conventionally used, the rate (ΔR/R) of change in resistance and the unidirectional exchange bias magnetic field (Hex*) can both be improved.

    摘要翻译： 使用CoFe形成形成固定磁性层的非磁性材料非接触层，使用Co形成非磁性材料接触层，在非磁性材料 - 非接触层和非磁性材料 - 非接触层之间设置NOL（纳米氧化物层） 接触层。 此外，非磁性材料接触层的平均膜厚设定在16〜19的范围内。 因此，与通常使用的CoFe，NOL，CoFe或由Co，NOL，Co构成的三层结构体构成的三层结构相比，变化率（ΔR/ R） 电阻和单向交流偏置磁场（Hex *）都可以提高。

    SPIN-VALVE ELEMENT HAVING FIXED LAYER CONTAINING NANO-OXIDE LAYER
    5.
    发明申请
    SPIN-VALVE ELEMENT HAVING FIXED LAYER CONTAINING NANO-OXIDE LAYER 审中-公开
    具有包含纳米氧化层的固定层的旋转阀元件

    公开(公告)号：US20080145523A1

    公开(公告)日：2008-06-19

    申请号：US12033272

    申请日：2008-02-19

    申请人： Kazuaki Ikarashi ,  Naoya Hasegawa ,  Fumihito Koike ,  Eiji Umetsu

    发明人： Kazuaki Ikarashi ,  Naoya Hasegawa ,  Fumihito Koike ,  Eiji Umetsu

    IPC分类号： B05D5/12

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B2005/3996

    摘要： A nonmagnetic material-noncontact layer forming a fixed magnetic layer is formed using CoFe, a nonmagnetic material-contact layer is formed using Co, and an NOL (Nano-Oxide Layer) is provided between the nonmagnetic material-noncontact layer and the nonmagnetic material-contact layer. In addition, the average film thickness of the nonmagnetic material-contact layer is set in the range of 16 to 19 Å. Accordingly, compared to a three-layered structure composed of CoFe, an NOL, and CoFe or a three-layered structure composed of Co, an NOL, and Co, which has been conventionally used, the rate (ΔR/R) of change in resistance and the unidirectional exchange bias magnetic field (Hex*) can both be improved.

    摘要翻译： 使用CoFe形成形成固定磁性层的非磁性材料非接触层，使用Co形成非磁性材料接触层，在非磁性材料 - 非接触层和非磁性材料 - 非接触层之间设置NOL（纳米氧化物层） 接触层。 此外，非磁性材料接触层的平均膜厚设定在16〜19的范围内。 因此，与通常使用的CoFe，NOL，CoFe或由Co，NOL，Co构成的三层结构体构成的三层结构相比，变化率（ΔR/ R） 电阻和单向交流偏置磁场（Hex *）都可以提高。

    MAGNETIC DETECTING DEVICE HAVING LAMINATED SEED LAYER
    9.
    发明申请
    MAGNETIC DETECTING DEVICE HAVING LAMINATED SEED LAYER 审中-公开
    具有层压种子层的磁性检测装置

    公开(公告)号：US20070165336A1

    公开(公告)日：2007-07-19

    申请号：US11623671

    申请日：2007-01-16

    申请人： Kazumi Kamai ,  Naoya Hasegawa ,  Eiji Umetsu ,  Kazuaki Ikarashi

    发明人： Kazumi Kamai ,  Naoya Hasegawa ,  Eiji Umetsu ,  Kazuaki Ikarashi

    IPC分类号： G11B5/127

    CPC分类号： G11B5/3929 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906

    摘要： A magnetic detecting device is provided. The magnetic detecting device includes a magnetoresistive effect part having a fixed magnetic layer, and a free magnetic layer which faces the fixed magnetic layer with a nonmagnetic material layer therebetween and which varies in magnetization by an external magnetic field. A seed layer is provided below the magnetoresistive effect part. The seed layer includes an Al layer laminated on an NiFeCr layer.

    摘要翻译： 提供磁检测装置。 磁检测装置包括具有固定磁性层的磁阻效应部分和与其之间具有非磁性材料层的固定磁性层的自由磁性层，并且由外部磁场改变磁化强度。 种子层设置在磁阻效应部分的下方。 种子层包括层压在NiFeCr层上的Al层。

    Exchange-coupled film including pinned magnetic layer composed of a plurality of cobalt-iron alloys having different compositions disposed on antiferromagnetic layer, and magnetic sensing element
    10.
    发明授权
    Exchange-coupled film including pinned magnetic layer composed of a plurality of cobalt-iron alloys having different compositions disposed on antiferromagnetic layer, and magnetic sensing element 有权
    交换耦合膜包括由反铁磁性层上设置的具有不同组成的多种钴 - 铁合金构成的固定磁性层和磁感应元件

    公开(公告)号：US07369372B2

    公开(公告)日：2008-05-06

    申请号：US11271263

    申请日：2005-11-08

    申请人： Kazuaki Ikarashi ,  Naoya Hasegawa ,  Eiji Umetsu ,  Kazumi Matsuzaka ,  Takuya Seino

    发明人： Kazuaki Ikarashi ,  Naoya Hasegawa ,  Eiji Umetsu ,  Kazumi Matsuzaka ,  Takuya Seino

    IPC分类号： G11B5/00

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B2005/3996

    摘要： An exchange-coupled film includes a ferromagnetic layer and an antiferromagnetic layer disposed on each other, the magnetization direction of the ferromagnetic layer being pinned in one direction by an exchange coupling magnetic field generated at the interface between the ferromagnetic layer and the antiferromagnetic layer, wherein the antiferromagnetic layer is composed of IrzMn100-z (wherein 2 atomic percent≦z≦80 atomic percent), the ferromagnetic layer has a two-layer structure including a CoyFe100-y layer having a face-centered cubic structure (wherein 80 atomic percent≦y≦100 atomic percent), the CoyFe100-y layer being in contact with the antiferromagnetic layer, and an FexCo100-x layer (wherein x≧30 atomic percent), the FexCo100-x layer being disposed on the CoyFe100-y layer, and the thickness of the FexCo100-x layer is 30% to 90% of the total thickness of the ferromagnetic layer.

    摘要翻译： 交换耦合膜包括铁磁层和反铁磁层，其铁磁层的磁化方向通过在铁磁层和反铁磁层之间的界面处产生的交换耦合磁场在一个方向上被钉扎，其中 反铁磁性层由贱金属100-z（其中2原子％<= z <= 80原子％）组成，铁磁层具有双层结构 包括具有面心立方结构（其中80原子％<= y <= 100原子百分比）的Co 100 100 y + 100-y +层与反铁磁层接触，以及Fe x 100 Co + 100-x层（其中 x> = 30原子百分比），Fe 3 O 100-x层被设置在Co 100 Co 100-y 层，并且Fe×100 Co层的厚度为30％ 到铁磁层的总厚度的90％。