Invention Grant
- Patent Title: Photoresist materials and photolithography process
- Patent Title (中): 光刻胶材料和光刻工艺
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Application No.: US11462413Application Date: 2006-08-04
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Publication No.: US07972761B2Publication Date: 2011-07-05
- Inventor: Hsien-Cheng Wang , Chin-Hsiang Lin , H. J. Lee , Ching-Yu Chang , Hua-Tai Lin , Burn Jeng Lin
- Applicant: Hsien-Cheng Wang , Chin-Hsiang Lin , H. J. Lee , Ching-Yu Chang , Hua-Tai Lin , Burn Jeng Lin
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G03F7/004
- IPC: G03F7/004 ; G03F7/30
Abstract:
A material for use in lithography processing includes a polymer that turns soluble to a base solution in response to reaction with acid and a plurality of magnetically amplified generators (MAGs) each having a magnetic element and each decomposing to form acid bonded with the magnetic element in response to radiation energy.
Public/Granted literature
- US20080030692A1 NOVEL PHOTORESIST MATERIALS AND PHOTOLITHOGRAPHY PROCESS Public/Granted day:2008-02-07
Information query
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